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2nd International Conference on ALD Applications & 3rd China ALD conference

Prof Shi-Jin Ding, Prof Yongfeng Mei

  1. Nano Express

    The influence of process parameters and pulse ratio of precursors on the characteristics of La1 − x Al x O3 films deposited by atomic layer deposition

    The influence of processing parameters of aluminum oxide (Al2O3) and lanthanum oxide (La2O3) gate dielectric is investigated. Trimethylaluminum (TMA) and tris(isopropylcyclopentadienyl) lanthanum [La(iPrCp)3] wer...

    Chenxi Fei, Hongxia Liu, Xing Wang and Xiaojiao Fan

    Nanoscale Research Letters 2015 10:180

    Published on: 14 April 2015

  2. Nano Express

    Thin film encapsulation for organic light-emitting diodes using inorganic/organic hybrid layers by atomic layer deposition

    A hybrid nanolaminates consisting of Al2O3/ZrO2/alucone (aluminum alkoxides with carbon-containing backbones) grown by atomic layer deposition (ALD) were reported for an encapsulation of organic light-emitting di...

    Hao Zhang, He Ding, Mengjie Wei, Chunya Li, Bin Wei and Jianhua Zhang

    Nanoscale Research Letters 2015 10:169

    Published on: 8 April 2015

  3. Nano Express

    Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications

    We have demonstrated a flexible resistive random access memory unit with trilayer structure by atomic layer deposition (ALD). The device unit is composed of Al2O3/HfO2/Al2O3-based functional stacks on TiN-coated ...

    Lai-Guo Wang, Xu Qian, Yan-Qiang Cao, Zheng-Yi Cao, Guo-Yong Fang, Ai-Dong Li and Di Wu

    Nanoscale Research Letters 2015 10:135

    Published on: 19 March 2015

  4. Nano Express

    A flexible transparent gas barrier film employing the method of mixing ALD/MLD-grown Al2O3 and alucone layers

    Atomic layer deposition (ALD) has been widely reported as a novel method for thin film encapsulation (TFE) of organic light-emitting diodes and organic photovoltaic cells. Both organic and inorganic thin films...

    Wang Xiao, Duan Ya Hui, Chen Zheng, Duan Yu, Yang Yong Qiang, Chen Ping, Chen Li Xiang and Zhao Yi

    Nanoscale Research Letters 2015 10:130

    Published on: 14 March 2015

  5. Nano Express

    AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique

    Recently, AlN plasma-enhanced atomic layer deposition (ALD) passivation technique had been proposed and investigated for suppressing the dynamic on-resistance degradation behavior of high-electron-mobility tra...

    Xiao-Yong Liu, Sheng-Xun Zhao, Lin-Qing Zhang, Hong-Fan Huang, Jin-Shan Shi, Chun-Min Zhang, Hong-Liang Lu, Peng-Fei Wang and David Wei Zhang

    Nanoscale Research Letters 2015 10:109

    Published on: 4 March 2015

  6. Nano Express

    Room-temperature electrically pumped near-infrared random lasing from high-quality m-plane ZnO-based metal-insulator-semiconductor devices

    Epitaxial m-plane ZnO thin films have been deposited on m-plane sapphire substrates at a low temperature of 200°C by atomic layer deposition. A 90° in-plane rotation is observed between the m-plane ZnO thin fi...

    Chao Chen, Ti Wang, Hao Wu, He Zheng, Jianbo Wang, Yang Xu and Chang Liu

    Nanoscale Research Letters 2015 10:100

    Published on: 1 March 2015

  7. Nano Express

    Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon

    Phase-change access memory (PCM) appears to be the strongest candidate for next-generation high-density nonvolatile memory. The fabrication of ultrahigh-density PCM depends heavily on the thin-film growth tech...

    Sannian Song, Dongning Yao, Zhitang Song, Lina Gao, Zhonghua Zhang, Le Li, Lanlan Shen, Liangcai Wu, Bo Liu, Yan Cheng and Songlin Feng

    Nanoscale Research Letters 2015 10:89

    Published on: 28 February 2015

  8. Nano Express

    The function of a 60-nm-thick AlN buffer layer in n-ZnO/AlN/p-Si(111)

    ZnO films were prepared on p-Si (111) substrates by using atomic layer deposition. High-resolution x-ray diffraction (XRD), scanning electron microscopy (SEM), x-ray photoelectron spectroscopy (XPS), photolumi...

    Wei Wang, Chao Chen, Guozhen Zhang, Ti Wang, Hao Wu, Yong Liu and Chang Liu

    Nanoscale Research Letters 2015 10:91

    Published on: 28 February 2015

  9. Nano Express

    High-performance flexible Ag nanowire electrode with low-temperature atomic-layer-deposition fabrication of conductive-bridging ZnO film

    As material for flexible transparent electrodes for organic photoelectric devices, the silver nanowires (AgNWs) have been widely studied. In this work, we propose a hybrid flexible anode with photopolymer subs...

    Ya-Hui Duan, Yu Duan, Ping Chen, Ye Tao, Yong-Qiang Yang and Yi Zhao

    Nanoscale Research Letters 2015 10:90

    Published on: 28 February 2015

  10. Nano Express

    Transparent and flexible capacitors based on nanolaminate Al2O3/TiO2/Al2O3

    Transparent and flexible capacitors based on nanolaminate Al2O3/TiO2/Al2O3 dielectrics have been fabricated on indium tin oxide-coated polyethylene naphthalate substrates by atomic layer deposition. A capacitance...

    Guozhen Zhang, Hao Wu, Chao Chen, Ti Wang, Jin Yue and Chang Liu

    Nanoscale Research Letters 2015 10:76

    Published on: 18 February 2015

  11. Nano Express

    Investigation of LRS dependence on the retention of HRS in CBRAM

    The insufficient retention prevents the resistive random access memory from intended application, such as code storage, FPGA, encryption, and others. The retention characteristics of high resistance state (HRS...

    Xiaoxin Xu, Hangbing Lv, Hongtao Liu, Qing Luo, Tiancheng Gong, Ming Wang, Guoming Wang, Meiyun Zhang, Yang Li, Qi Liu, Shibing Long and Ming Liu

    Nanoscale Research Letters 2015 10:61

    Published on: 11 February 2015

  12. Nano Express

    The impact of thickness and thermal annealing on refractive index for aluminum oxide thin films deposited by atomic layer deposition

    The aluminum oxide (Al2O3) thin films with various thicknesses under 50 nm were deposited by atomic layer deposition (ALD) on silicon substrate. The surface topography investigated by atomic force microscopy (AFM...

    Zi-Yi Wang, Rong-Jun Zhang, Hong-Liang Lu, Xin Chen, Yan Sun, Yun Zhang, Yan-Feng Wei, Ji-Ping Xu, Song-You Wang, Yu-Xiang Zheng and Liang-Yao Chen

    Nanoscale Research Letters 2015 10:46

    Published on: 6 February 2015

  13. Nano Express

    Impact of program/erase operation on the performances of oxide-based resistive switching memory

    Further performance improvement is necessary for resistive random access memory (RRAM) to realize its commercialization. In this work, a novel pulse operation method is proposed to improve the performance of R...

    Guoming Wang, Shibing Long, Zhaoan Yu, Meiyun Zhang, Yang Li, Dinglin Xu, Hangbing Lv, Qi Liu, Xiaobing Yan, Ming Wang, Xiaoxin Xu, Hongtao Liu, Baohe Yang and Ming Liu

    Nanoscale Research Letters 2015 10:39

    Published on: 5 February 2015

  14. Nano Express

    Optical properties and bandgap evolution of ALD HfSiOx films

    Hafnium silicate films with pure HfO2 and SiO2 samples as references were fabricated by atomic layer deposition (ALD) in this work. The optical properties of the films as a function of the film composition were m...

    Wen Yang, Michael Fronk, Yang Geng, Lin Chen, Qing-Qing Sun, Ovidiu D Gordan, Peng zhou, Dietrich RT Zahn and David Wei Zhang

    Nanoscale Research Letters 2015 10:32

    Published on: 5 February 2015

    The Erratum to this article has been published in Nanoscale Research Letters 2015 10:378

  15. Nano Express

    Statistical characteristics of reset switching in Cu/HfO2/Pt resistive switching memory

    A major challenge of resistive switching memory (resistive random access memory (RRAM)) for future application is how to reduce the fluctuation of the resistive switching parameters. In this letter, with a sta...

    Meiyun Zhang, Shibing Long, Guoming Wang, Ruoyu Liu, Xiaoxin Xu, Yang Li, Dinlin Xu, Qi Liu, Hangbing Lv, Enrique Miranda, Jordi Suñé and Ming Liu

    Nanoscale Research Letters 2014 9:694

    Published on: 23 December 2014