Edited by Gaoshan Huang (Fudan University, China), Wen-Jun Liu (Fudan University, China) and Xinwei Wang (Peking University Shenzhen Graduate School, China)
The atomic layer deposition (ALD) technique has been widely used and explored in numerous fields such as microelectronics, photoelectronics, optical coating, functional nanomaterials, MEMS/NEMS, energy storage, biotechnology, catalysis technology and etc. This is attributed to some unique advantages of ALD, including precise control of nano-scale thickness, superior uniformity across a large area, excellent conformity, relatively low deposition temperature and stoichiometric composition. This thematic series in Nanoscale Research Letters is focused on recent progresses in ALD-related researches. The scope includes both theoretical and experimental investigations related to basic principle and practical application of ALD. The future direction is also discussed.
New articles in the collection will be added here as they are published.