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1st International Conference on ALD Applications & 2nd China ALD conference

Prof Shi-Jin Ding, Prof Yongfeng Mei

  1. Content type: Nano Express

    High-resolution synchrotron radiation photoemission was employed to study the effects of atomic-layer-deposited trimethylaluminum (TMA) and water on Ga-rich GaAs(001)-4 × 6 and As-rich GaAs(001)-2 × 4 surfaces...

    Authors: Tun-Wen Pi, Hsiao-Yu Lin, Ya-Ting Liu, Tsung-Da Lin, Gunther K Wertheim, Jueinai Kwo and Minghwei Hong

    Citation: Nanoscale Research Letters 2013 8:169

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  2. Content type: Nano Express

    ZnO/Al2O3 multilayers were prepared by alternating atomic layer deposition (ALD) at 150°C using diethylzinc, trimethylaluminum, and water. The growth process, crystallinity, and electrical and optical properties ...

    Authors: Qiongqiong Hou, Fanjie Meng and Jiaming Sun

    Citation: Nanoscale Research Letters 2013 8:144

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  3. Content type: Nano Express

    Metal contact to SiC is not easy to modulate since the contact can be influenced by the metal, the termination of the SiC, the doping, and the fabrication process. In this work, we introduce a method by insert...

    Authors: Shan Zheng, Qing-Qing Sun, Wen Yang, Peng Zhou, Hong-Liang Lu and David Wei Zhang

    Citation: Nanoscale Research Letters 2013 8:116

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  4. Content type: Nano Express

    Thermal atomic layer-deposited (ALD) aluminum oxide (Al2O3) acquires high negative fixed charge density (Qf) and sufficiently low interface trap density after annealing, which enables excellent surface passivatio...

    Authors: Yan Zhao, Chunlan Zhou, Xiang Zhang, Peng Zhang, Yanan Dou, Wenjing Wang, Xingzhong Cao, Baoyi Wang, Yehua Tang and Su Zhou

    Citation: Nanoscale Research Letters 2013 8:114

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  5. Content type: Nano Express

    High-quality Ti-doped ZnO films were grown on Si, thermally grown SiO2, and quartz substrates by atomic layer deposition (ALD) at 200°C with various Ti doping concentrations. Titanium isopropoxide, diethyl zinc, ...

    Authors: Zhi-Yuan Ye, Hong-Liang Lu, Yang Geng, Yu-Zhu Gu, Zhang-Yi Xie, Yuan Zhang, Qing-Qing Sun, Shi-Jin Ding and David Wei Zhang

    Citation: Nanoscale Research Letters 2013 8:108

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  6. Content type: Nano Express

    ZnO/TiO2 nanolaminates were grown on Si (100) and quartz substrates by atomic layer deposition at 200°C using diethylzinc, titanium isopropoxide, and deionized water as precursors. All prepared multilayers are no...

    Authors: Yu-Zhu Gu, Hong-Liang Lu, Yang Geng, Zhi-Yuan Ye, Yuan Zhang, Qing-Qing Sun, Shi-Jin Ding and David Wei Zhang

    Citation: Nanoscale Research Letters 2013 8:107

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  7. Content type: Nano Express

    The ZnO nanoflowers were synthesized by reactive vapor deposition. A secondary nucleation in the stalk/leaves interface was suggested. The photoluminescence revealed that there were many oxygen vacancies in th...

    Authors: Zhi Wei Ai, Yun Wu, Hao Wu, Ti Wang, Chao Chen, Yang Xu and Chang Liu

    Citation: Nanoscale Research Letters 2013 8:105

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  8. Content type: Nano Express

    ZnO/InGaN/GaN heterostructured light-emitting diodes (LEDs) were fabricated by molecular beam epitaxy and atomic layer deposition. InGaN films consisted of an Mg-doped InGaN layer, an undoped InGaN layer, and ...

    Authors: Ti Wang, Hao Wu, Zheng Wang, Chao Chen and Chang Liu

    Citation: Nanoscale Research Letters 2013 8:99

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  9. Content type: Nano Express

    The RESET process of NbAlO-based resistive switching memory devices fabricated by atomic layer deposition is investigated at low temperatures from 80 to 200 K. We observed that the conduction mechanism of high...

    Authors: Peng Zhou, Li Ye, Qing Qing Sun, Peng Fei Wang, An Quan Jiang, Shi Jin Ding and David Wei Zhang

    Citation: Nanoscale Research Letters 2013 8:91

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  10. Content type: Nano Express

    We demonstrated a flexible resistive random access memory device through a low-temperature atomic layer deposition process. The device is composed of an HfO2/Al2O3-based functional stack on an indium tin oxide-co...

    Authors: Run-Chen Fang, Qing-Qing Sun, Peng Zhou, Wen Yang, Peng-Fei Wang and David Wei Zhang

    Citation: Nanoscale Research Letters 2013 8:92

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  11. Content type: Nano Express

    In this paper, polyethyleneterephthalate (PET) films with and without plasma pretreatment were modified by atomic layer deposition (ALD) and plasma-assisted atomic layer deposition (PA-ALD). It demonstrates th...

    Authors: Riyanto Edy, Xiaojiang Huang, Ying Guo, Jing Zhang and Jianjun Shi

    Citation: Nanoscale Research Letters 2013 8:79

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  12. Content type: Nano Express

    A phase change memory (PCM) cell with atomic layer deposition titanium dioxide bottom heating layer is investigated. The crystalline titanium dioxide heating layer promotes the temperature rise in the AlSb3Te lay...

    Authors: Sannian Song, Zhitang Song, Cheng Peng, Lina Gao, Yifeng Gu, Zhonghua Zhang, Yegang Lv, Dongning Yao, Liangcai Wu and Bo Liu

    Citation: Nanoscale Research Letters 2013 8:77

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  13. Content type: Nano Express

    Pt nanodots have been grown on Al2O3 film via atomic layer deposition (ALD) using (MeCp)Pt(Me)3 and O2 precursors. Influence of the substrate temperature, pulse time of (MeCp)Pt(Me)3, and deposition cycles on ALD...

    Authors: Shi-Jin Ding, Hong-Bing Chen, Xing-Mei Cui, Sun Chen, Qing-Qing Sun, Peng Zhou, Hong-Liang Lu, David Wei Zhang and Chen Shen

    Citation: Nanoscale Research Letters 2013 8:80

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