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Coding and Signal Processing for Non-Volatile Memories

  1. Content type: Research

    Non-volatile resistive memories, such as phase-change RAM (PRAM) and spin transfer torque RAM (STT-RAM), have emerged as promising candidates because of their fast read access, high storage density, and very l...

    Authors: Chengen Yang, Yunus Emre, Yu Cao and Chaitali Chakrabarti

    Citation: EURASIP Journal on Advances in Signal Processing 2012 2012:211

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  2. Content type: Research

    Recently, low-density parity-check (LDPC) codes have been applied in flash memories to correct errors. However, as verified in this article, their performance degrades rapidly as the number of stuck cells incr...

    Authors: Qin Huang, Song Pan, Mu Zhang and Zulin Wang

    Citation: EURASIP Journal on Advances in Signal Processing 2012 2012:208

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  3. Content type: Research

    Semiconductor technology scaling makes NAND flash memory subject to continuous raw storage reliability degradation, leading to the demand for more and more powerful error correction codes. This inevitable tren...

    Authors: Wenzhe Zhao, Guiqiang Dong, Hongbin Sun, Nanning Zheng and Tong Zhang

    Citation: EURASIP Journal on Advances in Signal Processing 2012 2012:203

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  4. Content type: Research

    In 1M-bit/cell multi-level cell (MLC) flash memories, it is more difficult to guarantee the reliability of data as M increases. The reason is that an M-bit/cell MLC has 2 M stat...

    Authors: Yongjune Kim, Jaehong Kim, Jun Jin Kong, B V K Vijaya Kumar and Xin Li

    Citation: EURASIP Journal on Advances in Signal Processing 2012 2012:196

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