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Coding and Signal Processing for Non-Volatile Memories

  1. Research

    Improving reliability of non-volatile memory technologies through circuit level techniques and error control coding

    Non-volatile resistive memories, such as phase-change RAM (PRAM) and spin transfer torque RAM (STT-RAM), have emerged as promising candidates because of their fast read access, high storage density, and very l...

    Chengen Yang, Yunus Emre, Yu Cao and Chaitali Chakrabarti

    EURASIP Journal on Advances in Signal Processing 2012 2012:211

    Published on: 3 October 2012

  2. Research

    A concatenation scheme of LDPC codes and source codes for flash memories

    Recently, low-density parity-check (LDPC) codes have been applied in flash memories to correct errors. However, as verified in this article, their performance degrades rapidly as the number of stuck cells incr...

    Qin Huang, Song Pan, Mu Zhang and Zulin Wang

    EURASIP Journal on Advances in Signal Processing 2012 2012:208

    Published on: 25 September 2012

  3. Research

    Reducing latency overhead caused by using LDPC codes in NAND flash memory

    Semiconductor technology scaling makes NAND flash memory subject to continuous raw storage reliability degradation, leading to the demand for more and more powerful error correction codes. This inevitable tren...

    Wenzhe Zhao, Guiqiang Dong, Hongbin Sun, Nanning Zheng and Tong Zhang

    EURASIP Journal on Advances in Signal Processing 2012 2012:203

    Published on: 19 September 2012