Skip to main content


EMRS-E SiGe 2012

Dr Artur Podhorodecki, Dr Grzegorz Zatryb

  1. Content type: Nano Express

    Silicon-rich Al2O3 films (Si x (Al2O3)1−x) were co-sputtered from two separate silicon and alumina targets onto a long silicon oxide substrate. The effects of different annealing...

    Authors: Nadiia Korsunska, Larysa Khomenkova, Oleksandr Kolomys, Viktor Strelchuk, Andrian Kuchuk, Vasyl Kladko, Tetyana Stara, Oleksandr Oberemok, Borys Romanyuk, Philippe Marie, Jedrzej Jedrzejewski and Isaac Balberg

    Citation: Nanoscale Research Letters 2013 8:273

    Published on:

  2. Content type: Nano Express

    Optimisation of femtosecond pulsed laser deposition parameters for the fabrication of silicon thin films is discussed. Substrate temperature, gas pressure and gas type are used to better understand the deposit...

    Authors: Matthew Murray, Gin Jose, Billy Richards and Animesh Jha

    Citation: Nanoscale Research Letters 2013 8:272

    Published on:

  3. Content type: Nano Express

    In this work we demonstrate enhancement of the fluorescence collection efficiency for chlorophyll-containing photosynthetic complexes deposited on SiO2 spherical nanoparticles. Microscopic images of fluorescence ...

    Authors: Bartosz Krajnik, Magdalena Gajda-Rączka, Dawid Piątkowski, Piotr Nyga, Bartłomiej Jankiewicz, Eckhard Hofmann and Sebastian Mackowski

    Citation: Nanoscale Research Letters 2013 8:146

    Published on:

  4. Content type: Nano Express

    Silicon nanocrystals embedded in a silicon-rich silicon oxide matrix doped with Er3+ ions have been fabricated by electron cyclotron resonance plasma-enhanced chemical vapor deposition. Indirect excitation of erb...

    Authors: Artur Podhorodecki, Grzegorz Zatryb, Lukasz W Golacki, Jan Misiewicz, Jacek Wojcik and Peter Mascher

    Citation: Nanoscale Research Letters 2013 8:98

    Published on:

  5. Content type: Nano Express

    Differently hydrogenated radio frequency-sputtered a-Si layers have been studied by infrared (IR) spectroscopy as a function of the annealing time at 350°C with the aim to get a deeper understanding of the ori...

    Authors: Miklós Serényi, Cesare Frigeri, Zsolt Szekrényes, Katalin Kamarás, Lucia Nasi, Attila Csik and Nguyen Quoc Khánh

    Citation: Nanoscale Research Letters 2013 8:84

    Published on:

  6. Content type: Nano Express

    This paper represents the lowest growth temperature for silicon nano-wires (SiNWs) via a vapour-liquid–solid method, which has ever been reported in the literature. The nano-wires were grown using plasma-enhan...

    Authors: Nare Gabrielyan, Konstantina Saranti, Krishna Nama Manjunatha and Shashi Paul

    Citation: Nanoscale Research Letters 2013 8:83

    Published on:

  7. Content type: Nano Review

    The possibility to tune chemical and physical properties in nanosized materials has a strong impact on a variety of technologies, including photovoltaics. One of the prominent research areas of nanomaterials f...

    Authors: Wilfried GJHM van Sark, Jessica de Wild, Jatin K Rath, Andries Meijerink and Ruud EI Schropp

    Citation: Nanoscale Research Letters 2013 8:81

    Published on:

  8. Content type: Nano Express

    In this study, we report on the evolution of the microstructure and photoluminescence properties of Pr3+-doped hafnium silicate thin films as a function of annealing temperature (TA). The composition and microstr...

    Authors: YongTao An, Christophe Labbé, Larysa Khomenkova, Magali Morales, Xavier Portier and Fabrice Gourbilleau

    Citation: Nanoscale Research Letters 2013 8:43

    Published on:

  9. Content type: Nano Express

    The fabrication of ordered arrays of nanoporous Si nanopillars with and without nanoporous base and ordered arrays of Si nanopillars with nanoporous shells are presented. The fabrication route is using a combi...

    Authors: Dong Wang, Ran Ji, Song Du, Arne Albrecht and Peter Schaaf

    Citation: Nanoscale Research Letters 2013 8:42

    Published on:

  10. Content type: Nano Express

    Silicon nanocrystals embedded in a silicon oxide matrix were deposited by radio frequency reactive magnetron sputtering. By means of Raman spectroscopy, we have found that a compressive stress is exerted on th...

    Authors: Grzegorz Zatryb, Artur Podhorodecki, Jan Misiewicz, Julien Cardin and Fabrice Gourbilleau

    Citation: Nanoscale Research Letters 2013 8:40

    Published on:

  11. Content type: Nano Express

    Photoluminescence spectroscopy and atom probe tomography were used to explore the optical activity and microstructure of Er3+-doped Si-rich SiO2 thin films fabricated by radio-frequency magnetron sputtering. The ...

    Authors: Etienne Talbot, Rodrigue Lardé, Philippe Pareige, Larysa Khomenkova, Khalil Hijazi and Fabrice Gourbilleau

    Citation: Nanoscale Research Letters 2013 8:39

    Published on:

  12. Content type: Nano Express

    Highly n-doped silicon nanowires (SiNWs) with several lengths have been deposited via chemical vapor deposition on silicon substrate. These nanostructured silicon substrates have been used as electrodes to bui...

    Authors: Fleur Thissandier, Nicolas Pauc, Thierry Brousse, Pascal Gentile and Saïd Sadki

    Citation: Nanoscale Research Letters 2013 8:38

    Published on:

  13. Content type: Nano Express

    We have theoretically investigated the effects of random discrete distribution of implanted and annealed arsenic (As) atoms on device characteristics of silicon nanowire (Si NW) transistors. Kinetic Monte Carl...

    Authors: Masashi Uematsu, Kohei M Itoh, Gennady Mil'nikov, Hideki Minari and Nobuya Mori

    Citation: Nanoscale Research Letters 2012 7:685

    Published on: