Skip to main content

Applications of Atomic Layer Deposition

Edited by Gaoshan Huang (Fudan University, China), Wen-Jun Liu (Fudan University, China) and Xinwei Wang (Peking University Shenzhen Graduate School, China)

The atomic layer deposition (ALD) technique has been widely used and explored in numerous fields such as microelectronics, photoelectronics, optical coating, functional nanomaterials, MEMS/NEMS, energy storage, biotechnology, catalysis technology and etc. This is attributed to some unique advantages of ALD, including precise control of nano-scale thickness, superior uniformity across a large area, excellent conformity, relatively low deposition temperature and stoichiometric composition. This thematic series in Nanoscale Research Letters is focused on recent progresses in ALD-related researches. The scope includes both theoretical and experimental investigations related to basic principle and practical application of ALD. The future direction is also discussed. 

New articles in the collection will be added here as they are published.

​​​​​​​

  1. Non-volatile memory (NVM) will play a very important role in the next-generation digital technologies, including the Internet of things. The metal-oxide memristors, especially based on HfO2, have been favored by ...

    Authors: Lei Wu, Hongxia Liu, Jiabin Li, Shulong Wang and Xing Wang
    Citation: Nanoscale Research Letters 2019 14:177
    Content type: Nano Express Published on:

  2. We demonstrate the negative capacitance (NC) effect of HfZrOx-based field-effect transistors (FETs) in the experiments. Improved IDS, SS, and Gm of NCFET have been achieved in comparison with control metal oxide ...

    Authors: Jing Li, Yan Liu, Genquan Han, Jiuren Zhou and Yue Hao
    Citation: Nanoscale Research Letters 2019 14:171
    Content type: Nano Express Published on:

  3. In this study, we develop a facile method to fabricate highly sensitive and stable surface-enhanced Raman scattering (SERS) substrate, which is realized by combining co-sputtering with atomic layer deposition ...

    Authors: Guilin Yin, Shiheng Bai, Xinglong Tu, Zheng Li, Yanpeng Zhang, Weiming Wang, Jing Lu and Dannong He
    Citation: Nanoscale Research Letters 2019 14:168
    Content type: Nano Express Published on:

  4. Resistive random-access memory devices with atomic layer deposition HfO2 and radio frequency sputtering TiOx as resistive switching layers were fabricated successfully. Low-power characteristic with 1.52 μW set p...

    Authors: Xiangxiang Ding, Yulin Feng, Peng Huang, Lifeng Liu and Jinfeng Kang
    Citation: Nanoscale Research Letters 2019 14:157
    Content type: Nano Express Published on:

  5. As a key component of electron multiplier device, a microchannel plate (MCP) can be applied in many scientific fields. Pure aluminum oxide (Al2O3) as secondary electron emission (SEE) layer were deposited in the ...

    Authors: Weiwei Cao, Bingli Zhu, Xiaohong Bai, Peng Xu, Bo Wang, Junjun Qin, Yongsheng Gou, Fanpu Lei, Baiyu Liu, Junjiang Guo, Jingping Zhu and Yonglin Bai
    Citation: Nanoscale Research Letters 2019 14:153
    Content type: Nano Express Published on:

  6. In this study, aluminum oxide (Al2O3) films were prepared by a spatial atomic layer deposition using deionized water and trimethylaluminum, followed by oxygen (O2), forming gas (FG), or two-step annealing. Minori...

    Authors: Chia-Hsun Hsu, Yun-Shao Cho, Wan-Yu Wu, Shui-Yang Lien, Xiao-Ying Zhang, Wen-Zhang Zhu, Sam Zhang and Song-Yan Chen
    Citation: Nanoscale Research Letters 2019 14:139
    Content type: Nano Express Published on:

  7. Bilayer structures composed of 5% Mg-doped LiNbO3 single-crystal films and ultrathin Al2O3 layers with thickness ranging from 2 to 6 nm have been fabricated by using ion slicing technique combined with atomic lay...

    Authors: Yan Zhang, Qing Hua Ren, Xiao Jie Chai, Jun Jiang, Jian Guo Yang and An Quan Jiang
    Citation: Nanoscale Research Letters 2019 14:131
    Content type: Nano Express Published on:

  8. A comparison study on electrical performance of Ge pMOSFETs with a GeOx passivation layer formed by ozone post oxidation (OPO) and plasma post oxidation (PPO) is performed. PPO and OPO were carried out on an Al2O

    Authors: Yang Xu, Genquan Han, Huan Liu, Yibo Wang, Yan Liu, Jinping Ao and Yue Hao
    Citation: Nanoscale Research Letters 2019 14:126
    Content type: Nano Express Published on:

  9. Germanium (Ge) negative capacitance field-effect transistors (NCFETs) with various Zr compositions in Hf1−xZrxO2 (x = 0.33, 0.48, and 0.67) are fabricated and characterized. For each Zr composition, the NCFET exh...

    Authors: Yue Peng, Yan Liu, Genquan Han, Jincheng Zhang and Yue Hao
    Citation: Nanoscale Research Letters 2019 14:125
    Content type: Nano Express Published on:

  10. Electrical characteristics of amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) are compared by using O2 plasma-enhanced atomic layer deposition Al2O3 dielectrics at different temperatures. High-performa...

    Authors: Yan Shao, Xiaohan Wu, Mei-Na Zhang, Wen-Jun Liu and Shi-Jin Ding
    Citation: Nanoscale Research Letters 2019 14:122
    Content type: Nano Express Published on:

  11. Vertically aligned carbon nanotube arrays (VACNTs) show a great potential for various applications, such as thermal interface materials (TIMs). Besides the thermally oxidized SiO2, atomic layer deposition (ALD) w...

    Authors: Hao-Hao Li, Guang-Jie Yuan, Bo Shan, Xiao-Xin Zhang, Hong-Ping Ma, Ying-Zhong Tian, Hong-Liang Lu and Johan Liu
    Citation: Nanoscale Research Letters 2019 14:119
    Content type: Nano Express Published on:

  12. We report a novel nanocrystal-embedded-insulator (NEI) ferroelectric field-effect transistor (FeFET) with very thin unified-ferroelectric/dielectric (FE/DE) insulating layer, which is promising for low-voltage...

    Authors: Yue Peng, Genquan Han, Wenwu Xiao, Jibao Wu, Yan Liu, Jincheng Zhang and Yue Hao
    Citation: Nanoscale Research Letters 2019 14:115
    Content type: Nano Express Published on:

  13. Bi-layer structure has been widely adopted to improve the reliability of the conductive bridge random access memory (CBRAM). In this work, we proposed a convenient and economical solution to achieve a Ta2O5/TaOx ...

    Authors: Jie Yu, Xiaoxin Xu, Tiancheng Gong, Qing Luo, Danian Dong, Peng Yuan, Lu Tai, Jiahao Yin, Xi Zhu, Xiulong Wu, Hangbing Lv and Ming Liu
    Citation: Nanoscale Research Letters 2019 14:111
    Content type: Nano Express Published on:

  14. Vertically aligned carbon nanotubes (VACNTs) were synthesized on different oxide buffer layers using chemical vapor deposition (CVD). The growth of the VACNTs was mainly determined by three factors: the Ostwal...

    Authors: Haohao Li, Guangjie Yuan, Bo Shan, Xiaoxin Zhang, Hongping Ma, Yingzhong Tian, Hongliang Lu and Johan Liu
    Citation: Nanoscale Research Letters 2019 14:106
    Content type: Nano Express Published on:

  15. Artificial synapses are the fundamental of building a neuron network for neuromorphic computing to overcome the bottleneck of the von Neumann system. Based on a low-temperature atomic layer deposition process,...

    Authors: Tian-Yu Wang, Jia-Lin Meng, Zhen-Yu He, Lin Chen, Hao Zhu, Qing-Qing Sun, Shi-Jin Ding and David Wei Zhang
    Citation: Nanoscale Research Letters 2019 14:102
    Content type: Nano Express Published on:

  16. TiO2 is a promising environment friendly, low cost, and high electrochemical performance material. However, impediments like high internal ion resistance and low electrical conductivity restrict its applications ...

    Authors: Farah Naeem, Sumayyah Naeem, Yuting Zhao, Dingrun Wang, Jing Zhang, YongFeng Mei and Gaoshan Huang
    Citation: Nanoscale Research Letters 2019 14:92
    Content type: Nano Express Published on:

  17. In this work, Ru-based RRAM devices with atomic layer deposited AlOy/HfOx functional layer were fabricated and studied. A negative differential resistance (NDR) behavior was observed during the voltage set proces...

    Authors: Yulin Feng, Peng Huang, Zheng Zhou, Xiangxiang Ding, Lifeng Liu, Xiaoyan Liu and Jinfeng Kang
    Citation: Nanoscale Research Letters 2019 14:86
    Content type: Nano Express Published on:

  18. In this work, hafnium oxide (HfO2) thin films are deposited on p-type Si substrates by remote plasma atomic layer deposition on p-type Si at 250 °C, followed by a rapid thermal annealing in nitrogen. Effect of po...

    Authors: Xiao-Ying Zhang, Chia-Hsun Hsu, Shui-Yang Lien, Wan-Yu Wu, Sin-Liang Ou, Song-Yan Chen, Wei Huang, Wen-Zhang Zhu, Fei-Bing Xiong and Sam Zhang
    Citation: Nanoscale Research Letters 2019 14:83
    Content type: Nano Express Published on:

  19. For advanced Cu interconnect technology, Co films have been widely investigated to serve as the liner and seed layer replacement because of a better wettability to Cu than Ta. In this article, the Co films are...

    Authors: Bao Zhu, Zi-Jun Ding, Xiaohan Wu, Wen-Jun Liu, David Wei Zhang and Shi-Jin Ding
    Citation: Nanoscale Research Letters 2019 14:76
    Content type: Nano Express Published on:

  20. Zinc oxide (ZnO) nanomembranes/graphene aerogel (GAZ) composites were successfully fabricated via atomic layer deposition (ALD). The composition of GAZ composites can be controlled by changing the number of AL...

    Authors: Dingrun Wang, Yalan Li, Yuting Zhao, Qinglei Guo, Siwei Yang, Guqiao Ding, YongFeng Mei and Gaoshan Huang
    Citation: Nanoscale Research Letters 2019 14:69
    Content type: Nano Express Published on:

  21. In this work, we report the successful growth of high-quality SiO2 films by low-temperature plasma-enhanced atomic layer deposition using an oxidant which is compatible with moisture/oxygen sensitive materials. T...

    Authors: Zhen Zhu, Perttu Sippola, Oili M. E. Ylivaara, Chiara Modanese, Marisa Di Sabatino, Kenichiro Mizohata, Saoussen Merdes, Harri Lipsanen and Hele Savin
    Citation: Nanoscale Research Letters 2019 14:55
    Content type: Nano Express Published on:

  22. For metal-insulator-metal (MIM) capacitors applicated in the fields of RF, DRAM, and analog/mixed-signal integrated circuits, a high capacitance density is imperative with the downscaling of the device feature...

    Authors: Bao Zhu, Xiaohan Wu, Wen-Jun Liu, Shi-Jin Ding, David Wei Zhang and Zhongyong Fan
    Citation: Nanoscale Research Letters 2019 14:53
    Content type: Nano Express Published on:

  23. With Moore’s law closing to its physical limit, traditional von Neumann architecture is facing a challenge. It is expected that the computing in-memory architecture-based resistive random access memory (RRAM) ...

    Authors: Zhen-Yu He, Tian-Yu Wang, Lin Chen, Hao Zhu, Qing-Qing Sun, Shi-Jin Ding and David Wei Zhang
    Citation: Nanoscale Research Letters 2019 14:51
    Content type: Nano Express Published on: