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Advanced Materials Nanocharacterization

Filippo Giannazzo, Pierre Eyben, Jacek Baranowski, Jean Camassel and Stefan Lanyi

  1. Micro-Raman and micro-transmission imaging experiments have been done on epitaxial graphene grown on the C- and Si-faces of on-axis 6H-SiC substrates. On the C-face it is shown that the SiC sublimation process...

    Authors: Antoine Tiberj, Nicolas Camara, Philippe Godignon and Jean Camassel

    Citation: Nanoscale Research Letters 2011 6:478

    Content type: Nano Express

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  2. Recently, we have suggested a scale-invariant model for a nano-transistor. In agreement with experiments a close-to-linear thresh-old trace was found in the calculated I D - V D-traces separating the regimes of c...

    Authors: Ulrich Wulf, Marcus Krahlisch and Hans Richter

    Citation: Nanoscale Research Letters 2011 6:365

    Content type: Nano Express

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  3. In this work, we present a nanometer resolution structural characterization of epitaxial graphene (EG) layers grown on 4H-SiC (0001) 8° off-axis, by annealing in inert gas ambient (Ar) in a wide temperature ra...

    Authors: Carmelo Vecchio, Sushant Sonde, Corrado Bongiorno, Martin Rambach, Rositza Yakimova, Vito Raineri and Filippo Giannazzo

    Citation: Nanoscale Research Letters 2011 6:269

    Content type: Nano Express

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  4. Enormous research effort has been put into optimizing organic-based opto-electronic systems for efficient generation of free charge carriers. This optimization is mainly due to typically high dissociation ener...

    Authors: Bohuslav Rezek, Jan Čermák, Alexander Kromka, Martin Ledinský, Pavel Hubík, Jiří J Mareš, Adam Purkrt, Vĕra Cimrová, Antonín Fejfar and Jan Kočka

    Citation: Nanoscale Research Letters 2011 6:238

    Content type: Nano Review

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  5. Understanding the roles of disorder and metal/graphene interface on the electronic and transport properties of graphene-based systems is crucial for a consistent analysis of the data deriving from experimental...

    Authors: Antonino La Magna and Ioannis Deretzis

    Citation: Nanoscale Research Letters 2011 6:234

    Content type: Nano Express

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  6. In this article, an angle-resolved photoelectron spectroscopy (ARPES), X-ray absorption spectroscopy (XAS), and density-functional theory (DFT) investigations of water and ammonia adsorption on graphene/Ni(111...

    Authors: Stefan Böttcher, Martin Weser, Yuriy S Dedkov, Karsten Horn, Elena N Voloshina and Beate Paulus

    Citation: Nanoscale Research Letters 2011 6:214

    Content type: Nano Express

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  7. Semiconducting CrSi2 nanocrystallites (NCs) were grown by reactive deposition epitaxy of Cr onto n-type silicon and covered with a 50-nm epitaxial silicon cap. Two types of samples were investigated: in one of th...

    Authors: László Dózsa, Štefan Lányi, Vito Raineri, Filippo Giannazzo and Nikolay Gennadevich Galkin

    Citation: Nanoscale Research Letters 2011 6:209

    Content type: Nano Review

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  8. Micro-Raman (μRS) and micro-photoluminescence spectroscopy (μPLS) are demonstrated as valuable characterization techniques for fundamental research on silicon as well as for technological issues in the photovo...

    Authors: Paul Gundel, Martin C Schubert, Friedemann D Heinz, Robert Woehl, Jan Benick, Johannes A Giesecke, Dominik Suwito and Wilhelm Warta

    Citation: Nanoscale Research Letters 2011 6:197

    Content type: Nano Express

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  9. Electron beam methods, such as cathodoluminescence (CL) that is based on an electron-probe microanalyser, and (200) dark field and high angle annular dark field (HAADF) in a scanning transmission electron micr...

    Authors: Cesare Frigeri, Alexey Aleksandrovich Shakhmin, Dmitry Anatolievich Vinokurov and Maria Vladimirovna Zamoryanskaya

    Citation: Nanoscale Research Letters 2011 6:194

    Content type: Nano Express

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  10. Here, we show that the Raman intensity of the G-mode in tip-enhanced Raman spectroscopy (TERS) is strongly dependent on the height of the bundle. Moreover, using TERS we are able to position different single-w...

    Authors: Niculina Peica, Christian Thomsen and Janina Maultzsch

    Citation: Nanoscale Research Letters 2011 6:174

    Content type: Nano Express

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  11. In this article, a multiscale investigation of few graphene layers grown on 6H-SiC(000-1) under ultrahigh vacuum (UHV) conditions is presented. At 100-μm scale, the authors show that the UHV growth yields few ...

    Authors: Antoine Tiberj, Jean-Roch Huntzinger, Jean Camassel, Fanny Hiebel, Ather Mahmood, Pierre Mallet, Cecile Naud and Jean-Yves Veuillen

    Citation: Nanoscale Research Letters 2011 6:171

    Content type: Nano Express

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  12. We report on the use of the self-organization process of sputtered gold nanoparticles on a self-assembled block copolymer film deposited by horizontal precipitation Langmuir-Blodgett (HP-LB) method. The morpho...

    Authors: Vanna Torrisi, Francesco Ruffino, Antonino Licciardello, Maria Grazia Grimaldi and Giovanni Marletta

    Citation: Nanoscale Research Letters 2011 6:167

    Content type: Nano Express

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  13. Silicon nanoclusters are of prime interest for new generation of optoelectronic and microelectronics components. Physical properties (light emission, carrier storage...) of systems using such nanoclusters are ...

    Authors: Manuel Roussel, Etienne Talbot, Fabrice Gourbilleau and Philippe Pareige

    Citation: Nanoscale Research Letters 2011 6:164

    Content type: Nano Express

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  14. This work reports a nanoscale electro-structural characterisation of Ti/Al ohmic contacts formed on p-type Al-implanted silicon carbide (4H-SiC). The morphological and the electrical properties of the Al-impla...

    Authors: Alessia Frazzetto, Filippo Giannazzo, Raffaella Lo Nigro, Salvatore Di Franco, Corrado Bongiorno, Mario Saggio, Edoardo Zanetti, Vito Raineri and Fabrizio Roccaforte

    Citation: Nanoscale Research Letters 2011 6:158

    Content type: Nano Review

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  15. Conductive-probe atomic force microscopy (CP-AFM) measurements reveal the existence of a conductive channel at the interface between p-type hydrogenated amorphous silicon (a-Si:H) and n-type crystalline silicon (

    Authors: Jean-Paul Kleider, Jose Alvarez, Alexander Vitalievitch Ankudinov, Alexander Sergeevitch Gudovskikh, Ekaterina Vladimirovna Gushchina, Martin Labrune, Olga Alexandrovna Maslova, Wilfried Favre, Marie-Estelle Gueunier-Farret, Pere Roca i Cabarrocas and Eugene Ivanovitch Terukov

    Citation: Nanoscale Research Letters 2011 6:152

    Content type: Nano Express

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  16. Conductive tips in atomic force microscopy (AFM) can be used to localize field-enhanced metal-induced solid-phase crystallization (FE-MISPC) of amorphous silicon (a-Si:H) at room temperature down to nanoscale ...

    Authors: Elisseos Verveniotis, Bohuslav Rezek, Emil Šípek, Jiří Stuchlík, Martin Ledinský and Jan Kočka

    Citation: Nanoscale Research Letters 2011 6:145

    Content type: Nano Express

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  17. We apply atomic force microscope for local electrostatic charging of oxygen-terminated nanocrystalline diamond (NCD) thin films deposited on silicon, to induce electrostatically driven self-assembly of colloid...

    Authors: Elisseos Verveniotis, Alexander Kromka, Martin Ledinský, Jan Čermák and Bohuslav Rezek

    Citation: Nanoscale Research Letters 2011 6:144

    Content type: Nano Express

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  18. Self-assembled iron-silicide nanostructures were prepared by reactive deposition epitaxy of Fe onto silicon. Capacitance-voltage, current-voltage, and deep level transient spectroscopy (DLTS) were used to meas...

    Authors: László Dózsa, György Molnár, Vito Raineri, Filippo Giannazzo, János Ferencz and Štefan Lányi

    Citation: Nanoscale Research Letters 2011 6:140

    Content type: Nano Review

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  19. The effects of near-surface processing on the properties of AlGaN/GaN heterostructures were studied, combining conventional electrical characterization on high-electron mobility transistors (HEMTs), with advan...

    Authors: Giuseppe Greco, Filippo Giannazzo, Alessia Frazzetto, Vito Raineri and Fabrizio Roccaforte

    Citation: Nanoscale Research Letters 2011 6:132

    Content type: Nano Review

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  20. In this work, the transport properties of metal/3C-SiC interfaces were monitored employing a nanoscale characterization approach in combination with conventional electrical measurements. In particular, using c...

    Authors: Jens Eriksson, Fabrizio Roccaforte, Sergey Reshanov, Stefano Leone, Filippo Giannazzo, Raffaella LoNigro, Patrick Fiorenza and Vito Raineri

    Citation: Nanoscale Research Letters 2011 6:120

    Content type: Nano Express

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  21. The conductive atomic force microscopy provided a local characterization of the dielectric heterogeneities in CaCu3Ti4O12 (CCTO) thin films deposited by MOCVD on IrO2 bottom electrode. In particular, both techniq...

    Authors: Patrick Fiorenza, Raffaella Lo Nigro and Vito Raineri

    Citation: Nanoscale Research Letters 2011 6:118

    Content type: Nano Express

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  22. The study of surface morphology of Au deposited on mica is crucial for the fabrication of flat Au films for applications in biological, electronic, and optical devices. The understanding of the growth mechanis...

    Authors: Francesco Ruffino, Vanna Torrisi, Giovanni Marletta and Maria Grazia Grimaldi

    Citation: Nanoscale Research Letters 2011 6:112

    Content type: Nano Express

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  23. Transparent conductive films (TCFs) are critical components of a myriad of technologies including flat panel displays, light-emitting diodes, and solar cells. Graphene-based TCFs have attracted a lot of attent...

    Authors: Ryousuke Ishikawa, Masashi Bando, Yoshitaka Morimoto and Adarsh Sandhu

    Citation: Nanoscale Research Letters 2011 6:111

    Content type: Nano Express

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  24. The electrical conduction properties of lateral and vertical silicon nanowires (SiNWs) were investigated using a conductive-probe atomic force microscopy (AFM). Horizontal SiNWs, which were synthesized by the ...

    Authors: José Alvarez, Irène Ngo, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider, Linwei Yu, Pere Rocai Cabarrocas, Simon Perraud, Emmanuelle Rouvière, Caroline Celle, Céline Mouchet and Jean-Pierre Simonato

    Citation: Nanoscale Research Letters 2011 6:110

    Content type: Nano Express

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  25. In this article, a scanning probe method based on nanoscale capacitance measurements was used to investigate the lateral homogeneity of the electron mean free path both in pristine and ion-irradiated graphene....

    Authors: Filippo Giannazzo, Sushant Sonde, Emanuele Rimini and Vito Raineri

    Citation: Nanoscale Research Letters 2011 6:109

    Content type: Nano Review

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  26. In this study, atomic force microscopy-related techniques have been used to investigate, at the nanoscale, how the polycrystallization of an Al2O3-based gate stack, after a thermal annealing process, affects the ...

    Authors: Mario Lanza, Vanessa Iglesias, Marc Porti, Montse Nafria and Xavier Aymerich

    Citation: Nanoscale Research Letters 2011 6:108

    Content type: Nano Express

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  27. This special issue of Nanoscale Research Letters contains scientific contributions presented at the Symposium D "Multidimensional Electrical and Chemical Characterization at the Nanometer-scale of Organic and Ino...

    Authors: Filippo Giannazzo, Pierre Eyben, Jacek Baranowski, Jean Camassel and Stefan Lányi

    Citation: Nanoscale Research Letters 2011 6:107

    Content type: Editorial

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