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2nd International Conference on ALD Applications & 3rd China ALD conference

Prof Shi-Jin Ding, Prof Yongfeng Mei

  1. Content type: Nano Express

    The influence of processing parameters of aluminum oxide (Al2O3) and lanthanum oxide (La2O3) gate dielectric is investigated. Trimethylaluminum (TMA) and tris(isopropylcyclopentadienyl) lanthanum [La(iPrCp)3] wer...

    Authors: Chenxi Fei, Hongxia Liu, Xing Wang and Xiaojiao Fan

    Citation: Nanoscale Research Letters 2015 10:180

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  2. Content type: Nano Express

    A hybrid nanolaminates consisting of Al2O3/ZrO2/alucone (aluminum alkoxides with carbon-containing backbones) grown by atomic layer deposition (ALD) were reported for an encapsulation of organic light-emitting di...

    Authors: Hao Zhang, He Ding, Mengjie Wei, Chunya Li, Bin Wei and Jianhua Zhang

    Citation: Nanoscale Research Letters 2015 10:169

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  3. Content type: Nano Express

    In this study, the physical and electrical characteristics of Al2O3/La2O3/Al2O3/Si stack structures affected by the thickness of an Al2O3 barrier layer between Si substrate and La2O3 layer are investigated after ...

    Authors: Xing Wang, Hong-Xia Liu, Chen-Xi Fei, Shu-Ying Yin and Xiao-Jiao Fan

    Citation: Nanoscale Research Letters 2015 10:141

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  4. Content type: Nano Express

    We have demonstrated a flexible resistive random access memory unit with trilayer structure by atomic layer deposition (ALD). The device unit is composed of Al2O3/HfO2/Al2O3-based functional stacks on TiN-coated ...

    Authors: Lai-Guo Wang, Xu Qian, Yan-Qiang Cao, Zheng-Yi Cao, Guo-Yong Fang, Ai-Dong Li and Di Wu

    Citation: Nanoscale Research Letters 2015 10:135

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  5. Content type: Nano Express

    In order to obtain a good passivation of a silicon surface, more and more stack passivation schemes have been used in high-efficiency silicon solar cell fabrication. In this work, we prepared a-Si:H(i)/Al2O3 stac...

    Authors: Yuren Xiang, Chunlan Zhou, Endong Jia and Wenjing Wang

    Citation: Nanoscale Research Letters 2015 10:137

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  6. Content type: Nano Express

    Atomic layer deposition (ALD) has been widely reported as a novel method for thin film encapsulation (TFE) of organic light-emitting diodes and organic photovoltaic cells. Both organic and inorganic thin films...

    Authors: Wang Xiao, Duan Ya Hui, Chen Zheng, Duan Yu, Yang Yong Qiang, Chen Ping, Chen Li Xiang and Zhao Yi

    Citation: Nanoscale Research Letters 2015 10:130

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  7. Content type: Nano Express

    Plasma-enhanced atom layer deposition (PEALD) can deposit denser films than those prepared by thermal ALD. But the improvement on thickness uniformity and the decrease of defect density of the films deposited ...

    Authors: Endong Jia, Chunlan Zhou and Wenjing Wang

    Citation: Nanoscale Research Letters 2015 10:129

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  8. Content type: Nano Express

    Recently, AlN plasma-enhanced atomic layer deposition (ALD) passivation technique had been proposed and investigated for suppressing the dynamic on-resistance degradation behavior of high-electron-mobility tra...

    Authors: Xiao-Yong Liu, Sheng-Xun Zhao, Lin-Qing Zhang, Hong-Fan Huang, Jin-Shan Shi, Chun-Min Zhang, Hong-Liang Lu, Peng-Fei Wang and David Wei Zhang

    Citation: Nanoscale Research Letters 2015 10:109

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  9. Content type: Nano Express

    Epitaxial m-plane ZnO thin films have been deposited on m-plane sapphire substrates at a low temperature of 200°C by atomic layer deposition. A 90° in-plane rotation is observed between the m-plane ZnO thin fi...

    Authors: Chao Chen, Ti Wang, Hao Wu, He Zheng, Jianbo Wang, Yang Xu and Chang Liu

    Citation: Nanoscale Research Letters 2015 10:100

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  10. Content type: Nano Express

    As material for flexible transparent electrodes for organic photoelectric devices, the silver nanowires (AgNWs) have been widely studied. In this work, we propose a hybrid flexible anode with photopolymer subs...

    Authors: Ya-Hui Duan, Yu Duan, Ping Chen, Ye Tao, Yong-Qiang Yang and Yi Zhao

    Citation: Nanoscale Research Letters 2015 10:90

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  11. Content type: Nano Express

    TiO2 films were grown on silicon substrates by atomic layer deposition (ALD) using tetrakis-dimethylamino titanium and ozone. Amorphous TiO2 film was deposited at a low substrate temperature of 165°C, and anatase...

    Authors: Chunyan Jin, Ben Liu, Zhongxiang Lei and Jiaming Sun

    Citation: Nanoscale Research Letters 2015 10:95

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  12. Content type: Nano Express

    ZnO films were prepared on p-Si (111) substrates by using atomic layer deposition. High-resolution x-ray diffraction (XRD), scanning electron microscopy (SEM), x-ray photoelectron spectroscopy (XPS), photolumi...

    Authors: Wei Wang, Chao Chen, Guozhen Zhang, Ti Wang, Hao Wu, Yong Liu and Chang Liu

    Citation: Nanoscale Research Letters 2015 10:91

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  13. Content type: Nano Express

    Currently, aluminum oxide stacked with silicon nitride (Al2O3/SiNx:H) is a promising rear passivation material for high-efficiency P-type passivated emitter and rear cell (PERC). It has been indicated that atomic...

    Authors: Shui-Yang Lien, Chih-Hsiang Yang, Kuei-Ching Wu and Chung-Yuan Kung

    Citation: Nanoscale Research Letters 2015 10:93

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  14. Content type: Nano Express

    Phase-change access memory (PCM) appears to be the strongest candidate for next-generation high-density nonvolatile memory. The fabrication of ultrahigh-density PCM depends heavily on the thin-film growth tech...

    Authors: Sannian Song, Dongning Yao, Zhitang Song, Lina Gao, Zhonghua Zhang, Le Li, Lanlan Shen, Liangcai Wu, Bo Liu, Yan Cheng and Songlin Feng

    Citation: Nanoscale Research Letters 2015 10:89

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  15. Content type: Nano Express

    Resistive switching memory cross-point arrays with TiN/HfO x /AlO y /Pt structure were fabricated. The bi-layered resistive switching films of 5...

    Authors: Zhe Chen, Feifei Zhang, Bing Chen, Yang Zheng, Bin Gao, Lifeng Liu, Xiaoyan Liu and Jinfeng Kang

    Citation: Nanoscale Research Letters 2015 10:70

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  16. Content type: Nano Express

    Atomic layer deposition (ALD) is a powerful deposition technique for constructing uniform, conformal, and ultrathin films in microelectronics, photovoltaics, catalysis, energy storage, and conversion. The poss...

    Authors: Guo-Yong Fang, Li-Na Xu, Lai-Guo Wang, Yan-Qiang Cao, Di Wu and Ai-Dong Li

    Citation: Nanoscale Research Letters 2015 10:68

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  17. Content type: Nano Express

    Undoped and Al-doped ZnO films were synthesized by atomic layer deposition at 150°C and then annealed at 350°C in different atmospheres. Effects of doping and annealing on the film growth mode and properties w...

    Authors: Aiji Wang, Tingfang Chen, Shuhua Lu, Zhenglong Wu, Yongliang Li, He Chen and Yinshu Wang

    Citation: Nanoscale Research Letters 2015 10:75

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  18. Content type: Nano Express

    The insufficient retention prevents the resistive random access memory from intended application, such as code storage, FPGA, encryption, and others. The retention characteristics of high resistance state (HRS...

    Authors: Xiaoxin Xu, Hangbing Lv, Hongtao Liu, Qing Luo, Tiancheng Gong, Ming Wang, Guoming Wang, Meiyun Zhang, Yang Li, Qi Liu, Shibing Long and Ming Liu

    Citation: Nanoscale Research Letters 2015 10:61

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  19. Content type: Nano Express

    Previous research on the laser damage resistance of thin films deposited by atomic layer deposition (ALD) is rare. In this work, the ALD process for thin film generation was investigated using different proces...

    Authors: Yaowei Wei, Feng Pan, Qinghua Zhang and Ping Ma

    Citation: Nanoscale Research Letters 2015 10:44

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  20. Content type: Nano Express

    The aluminum oxide (Al2O3) thin films with various thicknesses under 50 nm were deposited by atomic layer deposition (ALD) on silicon substrate. The surface topography investigated by atomic force microscopy (AFM...

    Authors: Zi-Yi Wang, Rong-Jun Zhang, Hong-Liang Lu, Xin Chen, Yan Sun, Yun Zhang, Yan-Feng Wei, Ji-Ping Xu, Song-You Wang, Yu-Xiang Zheng and Liang-Yao Chen

    Citation: Nanoscale Research Letters 2015 10:46

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  21. Content type: Nano Express

    Hafnium silicate films with pure HfO2 and SiO2 samples as references were fabricated by atomic layer deposition (ALD) in this work. The optical properties of the films as a function of the film composition were m...

    Authors: Wen Yang, Michael Fronk, Yang Geng, Lin Chen, Qing-Qing Sun, Ovidiu D Gordan, Peng zhou, Dietrich RT Zahn and David Wei Zhang

    Citation: Nanoscale Research Letters 2015 10:32

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    The Erratum to this article has been published in Nanoscale Research Letters 2015 10:378

  22. Content type: Nano Express

    Further performance improvement is necessary for resistive random access memory (RRAM) to realize its commercialization. In this work, a novel pulse operation method is proposed to improve the performance of R...

    Authors: Guoming Wang, Shibing Long, Zhaoan Yu, Meiyun Zhang, Yang Li, Dinglin Xu, Hangbing Lv, Qi Liu, Xiaobing Yan, Ming Wang, Xiaoxin Xu, Hongtao Liu, Baohe Yang and Ming Liu

    Citation: Nanoscale Research Letters 2015 10:39

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  23. Content type: Nano Express

    Ferroelectric Hf x Zr1-x O2 thin films are considered promising candidates for future lead-free CMOS-compatible ferroelectric memory application. The inductive cr...

    Authors: Xun Zhang, Lin Chen, Qing-Qing Sun, Lu-Hao Wang, Peng Zhou, Hong-Liang Lu, Peng-Fei Wang, Shi-Jin Ding and David Wei Zhang

    Citation: Nanoscale Research Letters 2015 10:25

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  24. Content type: Nano Express

    The paper reported the fabrication and operation of nonvolatile ferroelectric field effect transistors (FeFETs) with a top gate and top contact structure. Ultrathin Si nanomembranes without source and drain do...

    Authors: Ronggen Cao, Gaoshan Huang, Zengfeng Di, Guodong Zhu and Yongfeng Mei

    Citation: Nanoscale Research Letters 2014 9:695

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  25. Content type: Nano Express

    A major challenge of resistive switching memory (resistive random access memory (RRAM)) for future application is how to reduce the fluctuation of the resistive switching parameters. In this letter, with a sta...

    Authors: Meiyun Zhang, Shibing Long, Guoming Wang, Ruoyu Liu, Xiaoxin Xu, Yang Li, Dinlin Xu, Qi Liu, Hangbing Lv, Enrique Miranda, Jordi Suñé and Ming Liu

    Citation: Nanoscale Research Letters 2014 9:694

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