Skip to main content

Coding and Signal Processing for Non-Volatile Memories

  1. Non-volatile resistive memories, such as phase-change RAM (PRAM) and spin transfer torque RAM (STT-RAM), have emerged as promising candidates because of their fast read access, high storage density, and very l...

    Authors: Chengen Yang, Yunus Emre, Yu Cao and Chaitali Chakrabarti
    Citation: EURASIP Journal on Advances in Signal Processing 2012 2012:211
  2. Recently, low-density parity-check (LDPC) codes have been applied in flash memories to correct errors. However, as verified in this article, their performance degrades rapidly as the number of stuck cells incr...

    Authors: Qin Huang, Song Pan, Mu Zhang and Zulin Wang
    Citation: EURASIP Journal on Advances in Signal Processing 2012 2012:208
  3. Semiconductor technology scaling makes NAND flash memory subject to continuous raw storage reliability degradation, leading to the demand for more and more powerful error correction codes. This inevitable tren...

    Authors: Wenzhe Zhao, Guiqiang Dong, Hongbin Sun, Nanning Zheng and Tong Zhang
    Citation: EURASIP Journal on Advances in Signal Processing 2012 2012:203
  4. In 1M-bit/cell multi-level cell (MLC) flash memories, it is more difficult to guarantee the reliability of data as M increases. The reason is that an M-bit/cell MLC has 2 M stat...

    Authors: Yongjune Kim, Jaehong Kim, Jun Jin Kong, B V K Vijaya Kumar and Xin Li
    Citation: EURASIP Journal on Advances in Signal Processing 2012 2012:196