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Fluorite Structure Ferroelectric Materials and Devices

  1. Ferroelectric memory devices are expected for low-power and high-speed memory applications. HfO2-based ferroelectric is attracting attention for its CMOS-compatibility and high scalability. Mesoscopic-scale grain...

    Authors: Masaharu Kobayashi, Jixuan Wu, Yoshiki Sawabe, Saraya Takuya and Toshiro Hiramoto
    Citation: Nano Convergence 2022 9:50