Skip to main content

Novel gain materials and devices based on III-V-N/Bi compounds

  1. We report the observation of thermal annealing- and nitrogen-induced effects on electronic transport properties of as-grown and annealed n- and p-type modulation-doped Ga1 - xIn x ...

    Authors: Ömer Dönmez, Fahrettin Sarcan, Ayse Erol, Mustafa Gunes, Mehmet Çetin Arikan, Janne Puustinen and Mircea Guina
    Citation: Nanoscale Research Letters 2014 9:141
  2. We have grown GaAsBi quantum wells by molecular beam epitaxy. We have studied the properties of a 7% Bi GaAsBi quantum well and their variation with thermal annealing. High-resolution X-ray diffraction, second...

    Authors: Hajer Makhloufi, Poonyasiri Boonpeng, Simone Mazzucato, Julien Nicolai, Alexandre Arnoult, Teresa Hungria, Guy Lacoste, Christophe Gatel, Anne Ponchet, Hélène Carrère, Xavier Marie and Chantal Fontaine
    Citation: Nanoscale Research Letters 2014 9:123
  3. Bulk GaAs1 - xBi x /GaAs alloys with various bismuth compositions are studied using power- and temperature-dependent photoluminescence (PL), Raman scattering, and atomic force mi...

    Authors: Fahrettin Sarcan, Ömer Dönmez, Kamuran Kara, Ayse Erol, Elif Akalın, Mehmet Çetin Arıkan, Hajer Makhloufi, Alexandre Arnoult and Chantal Fontaine
    Citation: Nanoscale Research Letters 2014 9:119
  4. Photocurrent oscillations, observed at low temperatures in lattice-matched Ga1−xIn x N y As1−y/GaAs multiple quantum well (MQW) p-i-n samples, a...

    Authors: Ben Royall, Hagir Khalil, Simone Mazzucato, Ayse Erol and Naci Balkan
    Citation: Nanoscale Research Letters 2014 9:84
  5. Time-resolved photoluminescence (PL) was applied to study the dynamics of carrier recombination in GaInNAsSb quantum wells (QWs) emitting near 1.3 Î¼m and annealed at various temperatures. It was observed that ...

    Authors: Michal Baranowski, Robert Kudrawiec, Marcin Syperek, Jan Misiewicz, Tomas Sarmiento and James S Harris
    Citation: Nanoscale Research Letters 2014 9:81
  6. We report a time-resolved photoluminescence study for GaInNAs and GaNAsSb p-i-n bulk solar cells grown on GaAs(100). In particular, we studied the extent to which the carrier lifetime decreases with the increa...

    Authors: Alexander Gubanov, Ville Polojärvi, Arto Aho, Antti Tukiainen, Nikolai V Tkachenko and Mircea Guina
    Citation: Nanoscale Research Letters 2014 9:80
  7. We have calculated the optical absorption for InGaNAs and GaNSb using the band anticrossing (BAC) model and a self-consistent Green’s function (SCGF) method. In the BAC model, we include the interaction of iso...

    Authors: Masoud Seifikar, Eoin P O’Reilly and Stephen Fahy
    Citation: Nanoscale Research Letters 2014 9:51
  8. The Top-Hat hot electron light emission and lasing in semiconductor heterostructure (HELLISH)-vertical-cavity semiconductor optical amplifier (THH-VCSOA) is a bidirectional light-emitting and light-absorbing h...

    Authors: Faten Adel Ismael Chaqmaqchee and Naci Balkan
    Citation: Nanoscale Research Letters 2014 9:37
  9. An extensive study on molecular beam epitaxy growth conditions of quaternary GaAsSbN as a capping layer (CL) for InAs/GaAs quantum dots (QD) was carried out. In particular, CL thickness, growth temperature, an...

    Authors: Antonio D Utrilla, Jose M Ulloa, Alvaro Guzman and Adrian Hierro
    Citation: Nanoscale Research Letters 2014 9:36
  10. InPBi thin films have been grown on InP by gas source molecular beam epitaxy. A maximum Bi composition of 2.4% is determined by Rutherford backscattering spectrometry. X-ray diffraction measurements show good ...

    Authors: Yi Gu, Kai Wang, Haifei Zhou, Yaoyao Li, Chunfang Cao, Liyao Zhang, Yonggang Zhang, Qian Gong and Shumin Wang
    Citation: Nanoscale Research Letters 2014 9:24
  11. The structure and composition of single GaAsBi/GaAs epilayers grown by molecular beam epitaxy were investigated by optical and transmission electron microscopy techniques. Firstly, the GaAsBi layers exhibit tw...

    Authors: Daniel F Reyes, Faebian Bastiman, Chris J Hunter, David L Sales, Ana M Sanchez, John PR David and David González
    Citation: Nanoscale Research Letters 2014 9:23
  12. We report the observation of room-temperature optical gain at 1.3 Î¼m in electrically driven dilute nitride vertical cavity semiconductor optical amplifiers. The gain is calculated with respect to injected powe...

    Authors: Sefer Bora Lisesivdin, Nadir Ali Khan, Simone Mazzucato, Naci Balkan, Michael John Adams, Ville-Markus Korpijärvi, Mircea Guina, Gabor Mezosi and Marc Sorel
    Citation: Nanoscale Research Letters 2014 9:22
  13. The exciton recombination processes in a series of elastically strained GaAsBi epilayers are investigated by means of time-integrated and time-resolved photoluminescence at T = 10 K. The bismuth content in the sa...

    Authors: Simone Mazzucato, Henri Lehec, Helene Carrère, Hajer Makhloufi, Alexandre Arnoult, Chantal Fontaine, Thierry Amand and Xavier Marie
    Citation: Nanoscale Research Letters 2014 9:19