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3rd International Conference on ALD Applications & 2016 China ALD conference

  1. Al-doped ZnO (AZO) thin films were deposited directly on p-GaN substrates by using a two-step deposition consisting of polymer assisted deposition (PAD) and atomic layer deposition (ALD) methods. Ohmic contact...

    Authors: Xi Su, Guozhen Zhang, Xiao Wang, Chao Chen, Hao Wu and Chang Liu
    Citation: Nanoscale Research Letters 2017 12:469
    Content type: Nano Express Published on:

  2. In this paper, we report the combination of atomic layer deposition (ALD) with hydrothermal techniques to deposit ZnO on electrospun polyamide 6 (PA 6) nanofiber (NF) surface in the purpose of antibacterial ap...

    Authors: Zhengduo Wang, Li Zhang, Zhongwei Liu, Lijun Sang, Lizhen Yang and Qiang Chen
    Citation: Nanoscale Research Letters 2017 12:421
    Content type: Nano Idea Published on:

  3. The HfO2/TiO2/HfO2 trilayer-structure resistive random access memory (RRAM) devices have been fabricated on Pt- and TiN-coated Si substrates with Pt top electrodes by atomic layer deposition (ALD). The effect of ...

    Authors: Wei Zhang, Ji-Zhou Kong, Zheng-Yi Cao, Ai-Dong Li, Lai-Guo Wang, Lin Zhu, Xin Li, Yan-Qiang Cao and Di Wu
    Citation: Nanoscale Research Letters 2017 12:393
    Content type: Nano Express Published on:

  4. In situ-formed SiO2 was introduced into HfO2 gate dielectrics on Ge substrate as interlayer by plasma-enhanced atomic layer deposition (PEALD). The interfacial, electrical, and band alignment characteristics of t...

    Authors: Yan-Qiang Cao, Bing Wu, Di Wu and Ai-Dong Li
    Citation: Nanoscale Research Letters 2017 12:370
    Content type: Nano Express Published on:

  6. X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy have been used to determine interfacial properties of HfO2 and HfAlO gate dielectrics grown on InP by atomic layer deposition....

    Authors: Lifeng Yang, Tao Wang, Ying Zou and Hong-Liang Lu
    Citation: Nanoscale Research Letters 2017 12:339
    Content type: Nano Express Published on:

  7. Hafnium oxide (HfO2) thin films have attracted much attention owing to their usefulness in equivalent oxide thickness scaling in microelectronics, which arises from their high dielectric constant and thermodynami...

    Authors: Xiao-Ying Zhang, Chia-Hsun Hsu, Shui-Yang Lien, Song-Yan Chen, Wei Huang, Chih-Hsiang Yang, Chung-Yuan Kung, Wen-Zhang Zhu, Fei-Bing Xiong and Xian-Guo Meng
    Citation: Nanoscale Research Letters 2017 12:324
    Content type: Nano Express Published on:

  8. We report a low current collapse GaN-based high electron mobility transistor (HEMT) with an excellent thermal stability at 150 Â°C. The AlN was grown by N2-based plasma enhanced atomic layer deposition (PEALD) and...

    Authors: An-Jye Tzou, Kuo-Hsiung Chu, I-Feng Lin, Erik Østreng, Yung-Sheng Fang, Xiao-Peng Wu, Bo-Wei Wu, Chang-Hong Shen, Jia-Ming Shieh, Wen-Kuan Yeh, Chun-Yen Chang and Hao-Chung Kuo
    Citation: Nanoscale Research Letters 2017 12:315
    Content type: Nano Express Published on:

  9. The density of oxygen vacancies characterization in high-k/metal gate is significant for semiconductor device fabrication. In this work, a new approach was demonstrated to detect the density of oxygen vacancie...

    Authors: Da-Peng Xu, Lin-Jie Yu, Xu-Dong Chen, Lin Chen, Qing-Qing Sun, Hao Zhu, Hong-Liang Lu, Peng Zhou, Shi-Jin Ding and David Wei Zhang
    Citation: Nanoscale Research Letters 2017 12:311
    Content type: Nano Express Published on:

  10. Growing high-quality and uniform dielectric on black phosphorus is challenging since it is easy to react with O2 or H2O in ambient. In this work, we have directly grown Al2O3 on BP using plasma-enhanced atomic la...

    Authors: B. B. Wu, H. M. Zheng, Y. Q. Ding, W. J. Liu, H. L. Lu, P. Zhou, L. Chen, Q. Q. Sun, S. J. Ding and David W. Zhang
    Citation: Nanoscale Research Letters 2017 12:282
    Content type: Nano Express Published on:

  11. Aluminum nitride (AlN) thin films were deposited on Si (100) substrates by using plasma-enhanced atomic layer deposition method (PEALD). Optimal PEALD parameters for AlN deposition were investigated. Under sat...

    Authors: Sanjie Liu, Mingzeng Peng, Caixia Hou, Yingfeng He, Meiling Li and Xinhe Zheng
    Citation: Nanoscale Research Letters 2017 12:279
    Content type: Nano Express Published on:

  12. GaN-based metal-oxide-semiconductor capacitors with ZrO2 as the dielectric layer have been prepared by atomic layer deposition. The accumulation and depletion regions can be clearly distinguished when the voltage...

    Authors: Meijuan Zheng, Guozhen Zhang, Xiao Wang, Jiaxian Wan, Hao Wu and Chang Liu
    Citation: Nanoscale Research Letters 2017 12:267
    Content type: Nano Express Published on:

  13. Although CdS and PbS quantum dot-sensitized TiO2 nanotube arrays (TNTAs/QDs) show photocatalytic activity in the visible-light region, the low internal quantum efficiency and the slow interfacial hole transfer ra...

    Authors: Quan Zhou, Junchen Zhou, Min Zeng, Guizhen Wang, Yongjun Chen and Shiwei Lin
    Citation: Nanoscale Research Letters 2017 12:261
    Content type: Nano Express Published on:

  14. Multilayered hard coatings with a CrN matrix and an Al2O3, TiO2, or nanolaminate-Al2O3/TiO2 sealing layer were designed by a hybrid deposition process combined with physical vapor deposition (PVD) and atomic laye...

    Authors: Zhixin Wan, Teng Fei Zhang, Ji Cheng Ding, Chang-Min Kim, So-Won Park, Yang Yang, Kwang-Ho Kim and Se-Hun Kwon
    Citation: Nanoscale Research Letters 2017 12:248
    Content type: Nano Express Published on:

    The Erratum to this article has been published in Nanoscale Research Letters 2017 12:319

  15. A binary spike-time-dependent plasticity (STDP) protocol based on one resistive-switching random access memory (RRAM) device was proposed and experimentally demonstrated in the fabricated RRAM array. Based on ...

    Authors: Zheng Zhou, Chen Liu, Wensheng Shen, Zhen Dong, Zhe Chen, Peng Huang, Lifeng Liu, Xiaoyan Liu and Jinfeng Kang
    Citation: Nanoscale Research Letters 2017 12:244
    Content type: Nano Express Published on:

  16. Titanium dioxide (TiO2) ultrathin films with different thicknesses below 20 nm were grown by atomic layer deposition (ALD) on silicon substrates at 300 Â°C. Spectroscopic ellipsometry (SE) measurements were operat...

    Authors: Yue-Jie Shi, Rong-Jun Zhang, Hua Zheng, Da-Hai Li, Wei Wei, Xin Chen, Yan Sun, Yan-Feng Wei, Hong-Liang Lu, Ning Dai and Liang-Yao Chen
    Citation: Nanoscale Research Letters 2017 12:243
    Content type: Nano Express Published on:

  17. La2O3 films were grown on Si substrates by atomic layer deposition technique with different thickness. Crystallization characteristics of the La2O3 films were analyzed by grazing incidence X-ray diffraction after...

    Authors: Xing Wang, Hongxia Liu, Lu Zhao, Chenxi Fei, Xingyao Feng, Shupeng Chen and Yongte Wang
    Citation: Nanoscale Research Letters 2017 12:233
    Content type: Nano Express Published on:

  18. The capacitance and leakage current properties of multilayer La2O3/Al2O3 dielectric stacks and LaAlO3 dielectric film are investigated in this paper. A clear promotion of capacitance properties is observed for mu...

    Authors: Xing-Yao Feng, Hong-Xia Liu, Xing Wang, Lu Zhao, Chen-Xi Fei and He-Lei Liu
    Citation: Nanoscale Research Letters 2017 12:230
    Content type: Nano Express Published on:

  19. This letter demonstrates bi-layer channel Al-doped ZnO/ZnO thin film transistors (AZO/ZnO TFTs) via atomic layer deposition process at a relatively low temperature. The effects of annealing in oxygen atmospher...

    Authors: Huijin Li, Dedong Han, Liqiao Liu, Junchen Dong, Guodong Cui, Shengdong Zhang, Xing Zhang and Yi Wang
    Citation: Nanoscale Research Letters 2017 12:223
    Content type: Nano Express Published on:

  20. A comparative study of different sequences of two metal precursors [trimethylaluminum (TMA) and Tris(isopropylcyclopentadienyl) lanthanum (La(iPrCp)3)] for atomic layer deposition (ALD) lanthanum aluminum oxide (...

    Authors: Chenxi Fei, Hongxia Liu, Xing Wang, Lu Zhao, Dongdong Zhao and Xingyao Feng
    Citation: Nanoscale Research Letters 2017 12:218
    Content type: Nano Express Published on:

  21. Conductive bridge random access memory (CBRAM) has been extensively studied as a next-generation non-volatile memory. The conductive filament (CF) shows rich physical effects such as conductance quantization a...

    Authors: Leilei Li, Yang Liu, Jiao Teng, Shibing Long, Qixun Guo, Meiyun Zhang, Yu Wu, Guanghua Yu, Qi Liu, Hangbing Lv and Ming Liu
    Citation: Nanoscale Research Letters 2017 12:210
    Content type: Nano Express Published on:

  23. For the first time, the growth of Ni nanoparticles (NPs) was explored by plasma-assisted atomic layer deposition (ALD) technique using NiCp2 and NH3 precursors. Influences of substrate temperature and deposition ...

    Authors: Shi-Bing Qian, Yong-Ping Wang, Yan Shao, Wen-Jun Liu and Shi-Jin Ding
    Citation: Nanoscale Research Letters 2017 12:138
    Content type: Nano Express Published on:

  24. Well-behaved Ge quantum well (QW) p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) were fabricated on silicon-on-insulator (SOI) substrate. By optimizing the growth conditions, ultrathin...

    Authors: Yan Liu, Jiebin Niu, Hongjuan Wang, Genquan Han, Chunfu Zhang, Qian Feng, Jincheng Zhang and Yue Hao
    Citation: Nanoscale Research Letters 2017 12:120
    Content type: Nano Express Published on:

  25. In this study, we present a bilayer resistive switching memory device with Pt/Ta2O5/HfO2-x /Hf structure, which shows sub-1 Î¼A ultralow operating current, median switching voltage, adequat...

    Authors: Haili Ma, Jie Feng, Hangbing Lv, Tian Gao, Xiaoxin Xu, Qing Luo, Tiancheng Gong and Peng Yuan
    Citation: Nanoscale Research Letters 2017 12:118
    Content type: Nano Express Published on:

  26. We investigated the effects of different annealing ambients on the physical and electrical properties of LaAlO3 films grown by atomic layer deposition. Post-grown rapid thermal annealing (RTA) was carried out at ...

    Authors: Lu Zhao, Hong-xia Liu, Xing Wang, Chen-xi Fei, Xing-yao Feng and Yong-te Wang
    Citation: Nanoscale Research Letters 2017 12:108
    Content type: Nano Express Published on:

  27. The high interest in organic light-emitting device (OLED) technology is largely due to their flexibility. Up to now, indium tin oxide (ITO) films have been widely used as transparent conductive electrodes (TCE...

    Authors: Hu Wang, Kun Li, Ye Tao, Jun Li, Ye Li, Lan-Lan Gao, Guang-Yong Jin and Yu Duan
    Citation: Nanoscale Research Letters 2017 12:77
    Content type: Nano Express Published on:

  28. In this work, a kind of new memristor with the simple structure of Pt/HfOx/ZnOx/TiN was fabricated completely via combination of thermal-atomic layer deposition (TALD) and plasma-enhanced ALD (PEALD). The synapti...

    Authors: Lai-Guo Wang, Wei Zhang, Yan Chen, Yan-Qiang Cao, Ai-Dong Li and Di Wu
    Citation: Nanoscale Research Letters 2017 12:65
    Content type: Nano Express Published on:

  29. Thin-film transistors (TFTs) with atomic layer deposition (ALD) HfZnO (HZO) as channel layer and Al2O3 as gate insulator were successfully fabricated. Compared with ZnO-TFT, the stability of HZO-TFT was obviously...

    Authors: Xingwei Ding, Cunping Qin, Jiantao Song, Jianhua Zhang, Xueyin Jiang and Zhilin Zhang
    Citation: Nanoscale Research Letters 2017 12:63
    Content type: Nano Express Published on:

    The Erratum to this article has been published in Nanoscale Research Letters 2017 12:172