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Symposium E : Nanoscaled Si, Ge based materials

Dr Artur Podhorodecki

  1. Content type: Nano Express

    The concept of third-generation photovoltaics is to significantly increase device efficiencies whilst still using thin-film processes and abundant non-toxic materials. A strong potential approach is to fabrica...

    Authors: Gavin Conibeer, Ivan Perez-Wurfl, Xiaojing Hao, Dawei Di and Dong Lin

    Citation: Nanoscale Research Letters 2012 7:193

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  2. Content type: Nano Express

    We report a direct observation of Ge hut nucleation on Si(001) during UHV molecular beam epitaxy at 360°C. Nuclei of pyramids and wedges were observed on the wetting layer (WL) (M × N) patches starting from the c...

    Authors: Larisa V Arapkina and Vladimir A Yuryev

    Citation: Nanoscale Research Letters 2011 6:345

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  3. Content type: Nano Express

    By means of ADE-FDTD method, this paper investigates the electromagnetic modelling of a rib-loaded waveguide composed of a Nd3+ doped Silicon Rich Silicon Oxide active layer sandwiched between a SiO2 bottom cladd...

    Authors: Christian Dufour, Julien Cardin, Olivier Debieu, Alexandre Fafin and Fabrice Gourbilleau

    Citation: Nanoscale Research Letters 2011 6:278

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  4. Content type: Nano Review

    In this study, we have performed nanoscale characterization of Si-clusters and Si-nanowires with a laser-assisted tomographic atom probe. Intrinsic and p-type silicon nanowires (SiNWs) are elaborated by chemical ...

    Authors: Manuel Roussel, Wanghua Chen, Etienne Talbot, Rodrigue Lardé, Emmanuel Cadel, Fabrice Gourbilleau, Bruno Grandidier, Didier Stiévenard and Philippe Pareige

    Citation: Nanoscale Research Letters 2011 6:271

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  5. Content type: Nano Express

    The structural and optical properties of Ge quantum dots (QDs) grown on Si(001) for mid-infrared photodetector and Ge nanocrystals embedded in oxide matrices for floating gate memory devices are presented. The...

    Authors: Samit K Ray, Samaresh Das, Raj K Singha, Santanu Manna and Achintya Dhar

    Citation: Nanoscale Research Letters 2011 6:224

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  6. Content type: Nano Express

    The Si(001) surface deoxidized by short annealing at T ~ 925°C in the ultrahigh vacuum molecuar beam epitaxy chamber has been in situ investigated using high-resolution scanning tunneling microscopy (STM)and rede...

    Authors: Larisa V Arapkina, Vladimir A Yuryev, Kirill V Chizh, Vladimir M Shevlyuga, Mikhail S Storojevyh and Lyudmila A Krylova

    Citation: Nanoscale Research Letters 2011 6:218

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  7. Content type: Nano Express

    Hydrogenated multilayers (MLs) of a-Si/a-Ge have been analysed to establish the reasons of H release during annealing that has been seen to bring about structural modifications even up to well-detectable surfa...

    Authors: Cesare Frigeri, Miklós Serényi, Nguyen Quoc Khánh, Attila Csik, Ferenc Riesz, Zoltán Erdélyi, Lucia Nasi, Dezső László Beke and Hans-Gerd Boyen

    Citation: Nanoscale Research Letters 2011 6:189

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  8. Content type: Nano Express

    The growth of semiconductor (SC) nanowires (NW) by CVD using Au-catalyzed VLS process has been widely studied over the past few years. Among others SC, it is possible to grow pure Si or SiGe NW thanks to these...

    Authors: Alexis Potié, Thierry Baron, Florian Dhalluin, Guillaume Rosaz, Bassem Salem, Laurence Latu-Romain, Martin Kogelschatz, Pascal Gentile, Fabrice Oehler, Laurent Montès, Jens Kreisel and Hervé Roussel

    Citation: Nanoscale Research Letters 2011 6:187

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  9. Content type: Nano Express

    In this study, a wide range of a-SiN x :H films with an excess of silicon (20 to 50%) were prepared with an electron-cyclotron resonance plasma-enhanced chemical vapor deposition...

    Authors: Bhabani Shankar Sahu, Florian Delachat, Abdelilah Slaoui, Marzia Carrada, Gerald Ferblantier and Dominique Muller

    Citation: Nanoscale Research Letters 2011 6:178

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  10. Content type: Nano Express

    Ge nanocrystals (Ge-NCs) embedded in SiN dielectrics with HfO2/SiO2 stack tunnel dielectrics were synthesized by utilizing low-energy (≤5 keV) ion implantation method followed by conventional thermal annealing at...

    Authors: Bhabani Shankar Sahu, Florence Gloux, Abdelilah Slaoui, Marzia Carrada, Dominique Muller, Jesse Groenen, Caroline Bonafos and Sandrine Lhostis

    Citation: Nanoscale Research Letters 2011 6:177

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  11. Content type: Nano Express

    Pure and Si-rich HfO2 layers fabricated by radio frequency sputtering were utilized as alternative tunnel oxide layers for high-k/Si-nanocrystals-SiO2/SiO2 memory structures. The effect of Si incorporation on the...

    Authors: Larysa Khomenkova, Bhabani S Sahu, Abdelilah Slaoui and Fabrice Gourbilleau

    Citation: Nanoscale Research Letters 2011 6:172

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  12. Content type: Nano Express

    Silicon nanoclusters (Si-ncs) embedded in silicon nitride films have been studied to determine the effects that deposition and processing parameters have on their growth, luminescent properties, and electronic...

    Authors: Patrick RJ Wilson, Tyler Roschuk, Kayne Dunn, Elise N Normand, Evgueni Chelomentsev, Othman HY Zalloum, Jacek Wojcik and Peter Mascher

    Citation: Nanoscale Research Letters 2011 6:168

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  13. Content type: Nano Express

    In this letter, isolated Si nanocrystal has been formed by dewetting process with a thin silicon dioxide layer on top. Scanning capacitance microscopy and spectroscopy were used to study the memory properties ...

    Authors: Zhen Lin, Georges Bremond and Franck Bassani

    Citation: Nanoscale Research Letters 2011 6:163

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  14. Content type: Nano Express

    In this article, the microstructure and photoluminescence (PL) properties of Nd-doped silicon-rich silicon oxide (SRSO) are reported as a function of the annealing temperature and the Nd concentration. The thi...

    Authors: Olivier Debieu, Julien Cardin, Xavier Portier and Fabrice Gourbilleau

    Citation: Nanoscale Research Letters 2011 6:161

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  15. Content type: Nano Express

    Si and Ge have the same crystalline structure, and although Si-Au and Ge-Au binary alloys are thermodynamically similar (same phase diagram, with the eutectic temperature of about 360°C), in this study, it is ...

    Authors: Pietro Artoni, Emanuele Francesco Pecora, Alessia Irrera and Francesco Priolo

    Citation: Nanoscale Research Letters 2011 6:162

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  16. Content type: Nano Express

    In this article, we have fabricated and studied a new multilayer structure Si-SiO2/SiN x by reactive magnetron sputtering. The comparison between SiO2 and SiN x

    Authors: R Pratibha Nalini, Christian Dufour, Julien Cardin and Fabrice Gourbilleau

    Citation: Nanoscale Research Letters 2011 6:156

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  17. Content type: Nano Express

    In this study, the peculiarities of the transformations of gold films deposited on the Si wafer surfaces as a result of high temperature anneals are investigated experimentally depending on the conditions of w...

    Authors: Alla Klimovskaya, Andrey Sarikov, Yury Pedchenko, Andrey Voroshchenko, Oksana Lytvyn and Alexandr Stadnik

    Citation: Nanoscale Research Letters 2011 6:151

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  18. Content type: Nano Express

    A two-dimensional layers of metal (Me) nanocrystals embedded in SiO2 were produced by pulsed laser deposition of uniformly mixed Si:Me film followed by its furnace oxidation and rapid thermal annealing. The kinet...

    Authors: Andrei Novikau, Peter Gaiduk, Ksenia Maksimova and Andrei Zenkevich

    Citation: Nanoscale Research Letters 2011 6:148

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  19. Content type: Nano Express

    We report the growth of Si and Ge nanowires (NWs) on a Si(111) surface by molecular beam epitaxy. While Si NWs grow perpendicular to the surface, two types of growth axes are found for the Ge NWs. Structural s...

    Authors: Tao Xu, Julien Sulerzycki, Jean Philippe Nys, Gilles Patriarche, Bruno Grandidier and Didier Stiévenard

    Citation: Nanoscale Research Letters 2011 6:113

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  20. Content type: Nano Express

    The influence of hydrogen rate on optical properties of silicon nanocrystals deposited by sputtering method was studied by means of time-resolved photoluminescence spectroscopy as well as transmission and refl...

    Authors: G Zatryb, A Podhorodecki, J Misiewicz, J Cardin and F Gourbilleau

    Citation: Nanoscale Research Letters 2011 6:106

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