Skip to main content

Symposium E : Nanoscaled Si, Ge based materials

Dr Artur Podhorodecki

  1. Nano Express

    Si solid-state quantum dot-based materials for tandem solar cells

    The concept of third-generation photovoltaics is to significantly increase device efficiencies whilst still using thin-film processes and abundant non-toxic materials. A strong potential approach is to fabrica...

    Gavin Conibeer, Ivan Perez-Wurfl, Xiaojing Hao, Dawei Di and Dong Lin

    Nanoscale Research Letters 2012 7:193

    Published on: 21 March 2012

  2. Nano Express

    CMOS-compatible dense arrays of Ge quantum dots on the Si(001) surface: hut cluster nucleation, atomic structure and array life cycle during UHV MBE growth

    We report a direct observation of Ge hut nucleation on Si(001) during UHV molecular beam epitaxy at 360°C. Nuclei of pyramids and wedges were observed on the wetting layer (WL) (M × N) patches starting from the c...

    Larisa V Arapkina and Vladimir A Yuryev

    Nanoscale Research Letters 2011 6:345

    Published on: 15 April 2011

  3. Nano Express

    Electromagnetic modeling of waveguide amplifier based on Nd3+ Si-rich SiO2 layers by means of the ADE-FDTD method

    By means of ADE-FDTD method, this paper investigates the electromagnetic modelling of a rib-loaded waveguide composed of a Nd3+ doped Silicon Rich Silicon Oxide active layer sandwiched between a SiO2 bottom cladd...

    Christian Dufour, Julien Cardin, Olivier Debieu, Alexandre Fafin and Fabrice Gourbilleau

    Nanoscale Research Letters 2011 6:278

    Published on: 4 April 2011

  4. Nano Review

    Atomic scale investigation of silicon nanowires and nanoclusters

    In this study, we have performed nanoscale characterization of Si-clusters and Si-nanowires with a laser-assisted tomographic atom probe. Intrinsic and p-type silicon nanowires (SiNWs) are elaborated by chemical ...

    Manuel Roussel, Wanghua Chen, Etienne Talbot, Rodrigue Lardé, Emmanuel Cadel, Fabrice Gourbilleau, Bruno Grandidier, Didier Stiévenard and Philippe Pareige

    Nanoscale Research Letters 2011 6:271

    Published on: 30 March 2011

  5. Nano Express

    Phase transition on the Si(001) clean surface prepared in UHV MBE chamber: a study by high-resolution STM and in situ RHEED

    The Si(001) surface deoxidized by short annealing at T ~ 925°C in the ultrahigh vacuum molecuar beam epitaxy chamber has been in situ investigated using high-resolution scanning tunneling microscopy (STM)and rede...

    Larisa V Arapkina, Vladimir A Yuryev, Kirill V Chizh, Vladimir M Shevlyuga, Mikhail S Storojevyh and Lyudmila A Krylova

    Nanoscale Research Letters 2011 6:218

    Published on: 14 March 2011

  6. Nano Express

    Relationship between structural changes, hydrogen content and annealing in stacks of ultrathin Si/Ge amorphous layers

    Hydrogenated multilayers (MLs) of a-Si/a-Ge have been analysed to establish the reasons of H release during annealing that has been seen to bring about structural modifications even up to well-detectable surfa...

    Cesare Frigeri, Miklós Serényi, Nguyen Quoc Khánh, Attila Csik, Ferenc Riesz, Zoltán Erdélyi, Lucia Nasi, Dezső László Beke and Hans-Gerd Boyen

    Nanoscale Research Letters 2011 6:189

    Published on: 1 March 2011

  7. Nano Express

    Growth and characterization of gold catalyzed SiGe nanowires and alternative metal-catalyzed Si nanowires

    The growth of semiconductor (SC) nanowires (NW) by CVD using Au-catalyzed VLS process has been widely studied over the past few years. Among others SC, it is possible to grow pure Si or SiGe NW thanks to these...

    Alexis Potié, Thierry Baron, Florian Dhalluin, Guillaume Rosaz, Bassem Salem, Laurence Latu-Romain, Martin Kogelschatz, Pascal Gentile, Fabrice Oehler, Laurent Montès, Jens Kreisel and Hervé Roussel

    Nanoscale Research Letters 2011 6:187

    Published on: 1 March 2011

  8. Nano Express

    Effect of annealing treatments on photoluminescence and charge storage mechanism in silicon-rich SiN x :H films

    In this study, a wide range of a-SiN x :H films with an excess of silicon (20 to 50%) were prepared with an electron-cyclotron resonance plasma-enhanced chemical vapor deposition...

    Bhabani Shankar Sahu, Florian Delachat, Abdelilah Slaoui, Marzia Carrada, Gerald Ferblantier and Dominique Muller

    Nanoscale Research Letters 2011 6:178

    Published on: 28 February 2011

  9. Nano Express

    Effect of ion implantation energy for the synthesis of Ge nanocrystals in SiN films with HfO2/SiO2 stack tunnel dielectrics for memory application

    Ge nanocrystals (Ge-NCs) embedded in SiN dielectrics with HfO2/SiO2 stack tunnel dielectrics were synthesized by utilizing low-energy (≤5 keV) ion implantation method followed by conventional thermal annealing at...

    Bhabani Shankar Sahu, Florence Gloux, Abdelilah Slaoui, Marzia Carrada, Dominique Muller, Jesse Groenen, Caroline Bonafos and Sandrine Lhostis

    Nanoscale Research Letters 2011 6:177

    Published on: 28 February 2011

  10. Nano Express

    Hf-based high-k materials for Si nanocrystal floating gate memories

    Pure and Si-rich HfO2 layers fabricated by radio frequency sputtering were utilized as alternative tunnel oxide layers for high-k/Si-nanocrystals-SiO2/SiO2 memory structures. The effect of Si incorporation on the...

    Larysa Khomenkova, Bhabani S Sahu, Abdelilah Slaoui and Fabrice Gourbilleau

    Nanoscale Research Letters 2011 6:172

    Published on: 24 February 2011

  11. Nano Express

    Effect of thermal treatment on the growth, structure and luminescence of nitride-passivated silicon nanoclusters

    Silicon nanoclusters (Si-ncs) embedded in silicon nitride films have been studied to determine the effects that deposition and processing parameters have on their growth, luminescent properties, and electronic...

    Patrick RJ Wilson, Tyler Roschuk, Kayne Dunn, Elise N Normand, Evgueni Chelomentsev, Othman HY Zalloum, Jacek Wojcik and Peter Mascher

    Nanoscale Research Letters 2011 6:168

    Published on: 23 February 2011

  12. Nano Express

    Kinetics of Si and Ge nanowires growth through electron beam evaporation

    Si and Ge have the same crystalline structure, and although Si-Au and Ge-Au binary alloys are thermodynamically similar (same phase diagram, with the eutectic temperature of about 360°C), in this study, it is ...

    Pietro Artoni, Emanuele Francesco Pecora, Alessia Irrera and Francesco Priolo

    Nanoscale Research Letters 2011 6:162

    Published on: 21 February 2011

  13. Nano Express

    New Si-based multilayers for solar cell applications

    In this article, we have fabricated and studied a new multilayer structure Si-SiO2/SiN x by reactive magnetron sputtering. The comparison between SiO2 and SiN x

    R Pratibha Nalini, Christian Dufour, Julien Cardin and Fabrice Gourbilleau

    Nanoscale Research Letters 2011 6:156

    Published on: 18 February 2011

  14. Nano Express

    Study of the formation processes of gold droplet arrays on Si substrates by high temperature anneals

    In this study, the peculiarities of the transformations of gold films deposited on the Si wafer surfaces as a result of high temperature anneals are investigated experimentally depending on the conditions of w...

    Alla Klimovskaya, Andrey Sarikov, Yury Pedchenko, Andrey Voroshchenko, Oksana Lytvyn and Alexandr Stadnik

    Nanoscale Research Letters 2011 6:151

    Published on: 16 February 2011

  15. Nano Express

    Synthesis of long group IV semiconductor nanowires by molecular beam epitaxy

    We report the growth of Si and Ge nanowires (NWs) on a Si(111) surface by molecular beam epitaxy. While Si NWs grow perpendicular to the surface, two types of growth axes are found for the Ge NWs. Structural s...

    Tao Xu, Julien Sulerzycki, Jean Philippe Nys, Gilles Patriarche, Bruno Grandidier and Didier Stiévenard

    Nanoscale Research Letters 2011 6:113

    Published on: 2 February 2011