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8th International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces

Guest Editor: Stefano Sanguinetti

  1. Content type: SPECIAL ISSUE ARTICLE

    Si-doped GaAs/AlGaAs multi-quantum wells structures grown by molecular beam epitaxy on (100) and (311)B GaAs substrates have been studied by using conventional deep-level transient spectroscopy (DLTS) and high...

    Authors: M Shafi, RH Mari, A Khatab, D Taylor and M Henini

    Citation: Nanoscale Research Letters 2010 5:1948

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  2. Content type: SPECIAL ISSUE ARTICLE

    Site-controlled InAs nano dots were successfully fabricated by a STMBE system (in situ scanning tunneling microscopy during molecular beam epitaxy growth) at substrate temperatures from 50 to 430°C. After 1.5 ...

    Authors: Takashi Toujyou and Shiro Tsukamoto

    Citation: Nanoscale Research Letters 2010 5:1930

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  3. Content type: SPECIAL ISSUE ARTICLE

    Si and Ge growth on the stripe-patterned Si (001) substrates is studied using in situ reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). During Si buffer growth, the e...

    Authors: B Sanduijav, DG Matei and G Springholz

    Citation: Nanoscale Research Letters 2010 5:1935

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  4. Content type: SPECIAL ISSUE ARTICLE

    The ordered growth of self-assembled SiGe islands by surface thermal diffusion in ultra high vacuum from a lithographically etched Ge stripe on pit-patterned Si(100) surface has been experimentally investigate...

    Authors: GiovanniMaria Vanacore, Maurizio Zani, Monica Bollani, Davide Colombo, Giovanni Isella, Johann Osmond, Roman Sordan and Alberto Tagliaferri

    Citation: Nanoscale Research Letters 2010 5:1921

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  5. Content type: SPECIAL ISSUE ARTICLE

    SiGe islands have been proposed for applications in the fields of microelectronics, optoelectronics and thermoelectrics. Although most of the works in literature are based on MBE, one of the possible advantage...

    Authors: M Bollani, E Bonera, D Chrastina, A Fedorov, V Montuori, A Picco, A Tagliaferri, G Vanacore and R Sordan

    Citation: Nanoscale Research Letters 2010 5:1917

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  6. Content type: SPECIAL ISSUE ARTICLE

    In this work, we present results on the formation of vertical molecule structures formed by two vertically aligned InAs quantum dots (QD) in which a deliberate control of energy emission is achieved. The emiss...

    Authors: P Alonso-González, L González, J Martín-Sánchez, Y González, D Fuster, DL Sales, D Hernández-Maldonado, M Herrera and SI Molina

    Citation: Nanoscale Research Letters 2010 5:1913

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  7. Content type: SPECIAL ISSUE ARTICLE

    Good-quality (11−22) semipolar GaN sample was obtained using epitaxial lateral overgrowth. The growth conditions were chosen to enhance the growth rate along the [0001] inclined direction. Thus, the coalescenc...

    Authors: N Kriouche, M Leroux, P Vennéguès, M Nemoz, G Nataf and P de Mierry

    Citation: Nanoscale Research Letters 2010 5:1878

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  8. Content type: SPECIAL ISSUE ARTICLE

    The photovoltaic (PV) performance of flexible inverted organic solar cells (IOSCs) with an active layer consisting of a blend of poly(3-hexylthiophene) and [6, 6]-phenyl C61-butlyric acid methyl ester was investi...

    Authors: Kang Hyuck Lee, Brijesh Kumar, Hye-Jeong Park and Sang-Woo Kim

    Citation: Nanoscale Research Letters 2010 5:1908

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  9. Content type: SPECIAL ISSUE ARTICLE

    We propose a self-assembling procedure for the fabrication of GaAs islands by Droplet Epitaxy on silicon substrate. Controlling substrate temperature and amount of supplied gallium is possible to tune the base...

    Authors: S Bietti, C Somaschini, N Koguchi, C Frigeri and S Sanguinetti

    Citation: Nanoscale Research Letters 2010 5:1905

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  10. Content type: SPECIAL ISSUE ARTICLE

    Surface of an InAs wetting layer on GaAs(001) preceding InAs quantum dot (QD) formation was observed at 300°C with in situ scanning tunneling microscopy (STM). Domains of (1 × 3)/(2 × 3) and (2 × 4) surface re...

    Authors: Tomoya Konishi and Shiro Tsukamoto

    Citation: Nanoscale Research Letters 2010 5:1901

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  11. Content type: SPECIAL ISSUE ARTICLE

    We present the molecular beam epitaxy fabrication and optical properties of complex GaAs nanostructures by droplet epitaxy: concentric triple quantum rings. A significant difference was found between the volum...

    Authors: C Somaschini, S Bietti, A Fedorov, N Koguchi and S Sanguinetti

    Citation: Nanoscale Research Letters 2010 5:1897

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  12. Content type: SPECIAL ISSUE ARTICLE

    We report the use of partially relaxed tensile as well as compressively strained GaInP layers for lateral ordering of InAs quantum dots with the aid of misfit dislocation networks. The strained layers and the ...

    Authors: Teemu Hakkarainen, Andreas Schramm, Antti Tukiainen, Risto Ahorinta, Lauri Toikkanen and Mircea Guina

    Citation: Nanoscale Research Letters 2010 5:1892

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  13. Content type: SPECIAL ISSUE ARTICLE

    Surface chemistry involved in the epitaxy of graphene by sublimating Si atoms from the surface of epitaxial 3C-SiC(111) thin films on Si(111) has been studied. The change in the surface composition during grap...

    Authors: Shunsuke Abe, Hiroyuki Handa, Ryota Takahashi, Kei Imaizumi, Hirokazu Fukidome and Maki Suemitsu

    Citation: Nanoscale Research Letters 2010 5:1888

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  14. Content type: SPECIAL ISSUE ARTICLE

    The formation of nanometer-scale islands is an important issue for bottom-up-based schemes in novel electronic, optoelectronic and magnetoelectronic devices technology. In this work, we present a detailed atom...

    Authors: A González-González, M Alonso, E Navarro, JL Sacedón and A Ruiz

    Citation: Nanoscale Research Letters 2010 5:1882

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  15. Content type: SPECIAL ISSUE ARTICLE

    For randomly nucleated SiGe/Si(001) islands, a significantly stronger blue-shift of the PL spectra as a function of the excitation intensity is observed when compared to islands grown on patterned substrates s...

    Authors: M Brehm, M Grydlik, F Hackl, E Lausecker, T Fromherz and G Bauer

    Citation: Nanoscale Research Letters 2010 5:1868

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  16. Content type: SPECIAL ISSUE ARTICLE

    We present the Molecular Beam Epitaxy fabrication of complex GaAs/AlGaAs nanostructures by Droplet Epitaxy, characterized by the presence of concentric multiple rings. We propose an innovative experimental pro...

    Authors: C Somaschini, S Bietti, A Fedorov, N Koguchi and S Sanguinetti

    Citation: Nanoscale Research Letters 2010 5:1865

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    The Erratum to this article has been published in Nanoscale Research Letters 2010 5:1992