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8th International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces

Guest Editor: Stefano Sanguinetti

  1. SPECIAL ISSUE ARTICLE

    In situ Control of Si/Ge Growth on Stripe-Patterned Substrates Using Reflection High-Energy Electron Diffraction and Scanning Tunneling Microscopy

    Si and Ge growth on the stripe-patterned Si (001) substrates is studied using in situ reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). During Si buffer growth, the e...

    B Sanduijav, DG Matei and G Springholz

    Nanoscale Research Letters 2010 5:1935

    Published on: 6 October 2010

  2. SPECIAL ISSUE ARTICLE

    Size Evolution of Ordered SiGe Islands Grown by Surface Thermal Diffusion on Pit-Patterned Si(100) Surface

    The ordered growth of self-assembled SiGe islands by surface thermal diffusion in ultra high vacuum from a lithographically etched Ge stripe on pit-patterned Si(100) surface has been experimentally investigate...

    GiovanniMaria Vanacore, Maurizio Zani, Monica Bollani, Davide Colombo, Giovanni Isella, Johann Osmond, Roman Sordan and Alberto Tagliaferri

    Nanoscale Research Letters 2010 5:1921

    Published on: 30 September 2010

  3. SPECIAL ISSUE ARTICLE

    Ordered Arrays of SiGe Islands from Low-Energy PECVD

    SiGe islands have been proposed for applications in the fields of microelectronics, optoelectronics and thermoelectrics. Although most of the works in literature are based on MBE, one of the possible advantage...

    M Bollani, E Bonera, D Chrastina, A Fedorov, V Montuori, A Picco, A Tagliaferri, G Vanacore and R Sordan

    Nanoscale Research Letters 2010 5:1917

    Published on: 7 September 2010

  4. SPECIAL ISSUE ARTICLE

    Growth of Low-Density Vertical Quantum Dot Molecules with Control in Energy Emission

    In this work, we present results on the formation of vertical molecule structures formed by two vertically aligned InAs quantum dots (QD) in which a deliberate control of energy emission is achieved. The emiss...

    P Alonso-González, L González, J Martín-Sánchez, Y González, D Fuster, DL Sales, D Hernández-Maldonado, M Herrera and SI Molina

    Nanoscale Research Letters 2010 5:1913

    Published on: 5 September 2010

  5. SPECIAL ISSUE ARTICLE

    Optimization of an Electron Transport Layer to Enhance the Power Conversion Efficiency of Flexible Inverted Organic Solar Cells

    The photovoltaic (PV) performance of flexible inverted organic solar cells (IOSCs) with an active layer consisting of a blend of poly(3-hexylthiophene) and [6, 6]-phenyl C61-butlyric acid methyl ester was investi...

    Kang Hyuck Lee, Brijesh Kumar, Hye-Jeong Park and Sang-Woo Kim

    Nanoscale Research Letters 2010 5:1908

    Published on: 31 August 2010

  6. SPECIAL ISSUE ARTICLE

    Self-Assembled Local Artificial Substrates of GaAs on Si Substrate

    We propose a self-assembling procedure for the fabrication of GaAs islands by Droplet Epitaxy on silicon substrate. Controlling substrate temperature and amount of supplied gallium is possible to tune the base...

    S Bietti, C Somaschini, N Koguchi, C Frigeri and S Sanguinetti

    Nanoscale Research Letters 2010 5:1905

    Published on: 31 August 2010

  7. SPECIAL ISSUE ARTICLE

    Lateral Ordering of InAs Quantum Dots on Cross-hatch Patterned GaInP

    We report the use of partially relaxed tensile as well as compressively strained GaInP layers for lateral ordering of InAs quantum dots with the aid of misfit dislocation networks. The strained layers and the ...

    Teemu Hakkarainen, Andreas Schramm, Antti Tukiainen, Risto Ahorinta, Lauri Toikkanen and Mircea Guina

    Nanoscale Research Letters 2010 5:1892

    Published on: 20 August 2010

  8. SPECIAL ISSUE ARTICLE

    Surface Chemistry Involved in Epitaxy of Graphene on 3C-SiC(111)/Si(111)

    Surface chemistry involved in the epitaxy of graphene by sublimating Si atoms from the surface of epitaxial 3C-SiC(111) thin films on Si(111) has been studied. The change in the surface composition during grap...

    Shunsuke Abe, Hiroyuki Handa, Ryota Takahashi, Kei Imaizumi, Hirokazu Fukidome and Maki Suemitsu

    Nanoscale Research Letters 2010 5:1888

    Published on: 14 August 2010

  9. SPECIAL ISSUE ARTICLE

    Morphology Analysis of Si Island Arrays on Si(001)

    The formation of nanometer-scale islands is an important issue for bottom-up-based schemes in novel electronic, optoelectronic and magnetoelectronic devices technology. In this work, we present a detailed atom...

    A González-González, M Alonso, E Navarro, JL Sacedón and A Ruiz

    Nanoscale Research Letters 2010 5:1882

    Published on: 11 August 2010

  10. SPECIAL ISSUE ARTICLE

    Excitation Intensity Driven PL Shifts of SiGe Islands on Patterned and Planar Si(001) Substrates: Evidence for Ge-rich Dots in Islands

    For randomly nucleated SiGe/Si(001) islands, a significantly stronger blue-shift of the PL spectra as a function of the excitation intensity is observed when compared to islands grown on patterned substrates s...

    M Brehm, M Grydlik, F Hackl, E Lausecker, T Fromherz and G Bauer

    Nanoscale Research Letters 2010 5:1868

    Published on: 5 August 2010

  11. SPECIAL ISSUE ARTICLE

    Concentric Multiple Rings by Droplet Epitaxy: Fabrication and Study of the Morphological Anisotropy

    We present the Molecular Beam Epitaxy fabrication of complex GaAs/AlGaAs nanostructures by Droplet Epitaxy, characterized by the presence of concentric multiple rings. We propose an innovative experimental pro...

    C Somaschini, S Bietti, A Fedorov, N Koguchi and S Sanguinetti

    Nanoscale Research Letters 2010 5:1865

    Published on: 1 August 2010

    The Erratum to this article has been published in Nanoscale Research Letters 2010 5:1992