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Novel gain materials and devices based on III-V-N/Bi compounds

  1. Nano Review

    Magnetotransport study on as-grown and annealed n- and p-type modulation-doped GaInNAs/GaAs strained quantum well structures

    We report the observation of thermal annealing- and nitrogen-induced effects on electronic transport properties of as-grown and annealed n- and p-type modulation-doped Ga1 - xIn x ...

    Ömer Dönmez, Fahrettin Sarcan, Ayse Erol, Mustafa Gunes, Mehmet Çetin Arikan, Janne Puustinen and Mircea Guina

    Nanoscale Research Letters 2014 9:141

    Published on: 24 March 2014

  2. Nano Express

    Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealing

    We have grown GaAsBi quantum wells by molecular beam epitaxy. We have studied the properties of a 7% Bi GaAsBi quantum well and their variation with thermal annealing. High-resolution X-ray diffraction, second...

    Hajer Makhloufi, Poonyasiri Boonpeng, Simone Mazzucato, Julien Nicolai, Alexandre Arnoult, Teresa Hungria, Guy Lacoste, Christophe Gatel, Anne Ponchet, Hélène Carrère, Xavier Marie and Chantal Fontaine

    Nanoscale Research Letters 2014 9:123

    Published on: 17 March 2014

  3. Nano Express

    Bismuth-induced effects on optical, lattice vibrational, and structural properties of bulk GaAsBi alloys

    Bulk GaAs1 - xBi x /GaAs alloys with various bismuth compositions are studied using power- and temperature-dependent photoluminescence (PL), Raman scattering, and atomic force mi...

    Fahrettin Sarcan, Ömer Dönmez, Kamuran Kara, Ayse Erol, Elif Akalın, Mehmet Çetin Arıkan, Hajer Makhloufi, Alexandre Arnoult and Chantal Fontaine

    Nanoscale Research Letters 2014 9:119

    Published on: 14 March 2014

  4. Nano Express

    Time-resolved photoluminescence studies of annealed 1.3-μm GaInNAsSb quantum wells

    Time-resolved photoluminescence (PL) was applied to study the dynamics of carrier recombination in GaInNAsSb quantum wells (QWs) emitting near 1.3 μm and annealed at various temperatures. It was observed that ...

    Michal Baranowski, Robert Kudrawiec, Marcin Syperek, Jan Misiewicz, Tomas Sarmiento and James S Harris

    Nanoscale Research Letters 2014 9:81

    Published on: 17 February 2014

  5. Nano Express

    Dynamics of time-resolved photoluminescence in GaInNAs and GaNAsSb solar cells

    We report a time-resolved photoluminescence study for GaInNAs and GaNAsSb p-i-n bulk solar cells grown on GaAs(100). In particular, we studied the extent to which the carrier lifetime decreases with the increa...

    Alexander Gubanov, Ville Polojärvi, Arto Aho, Antti Tukiainen, Nikolai V Tkachenko and Mircea Guina

    Nanoscale Research Letters 2014 9:80

    Published on: 17 February 2014

  6. Nano Express

    Performance assessment of multijunction solar cells incorporating GaInNAsSb

    We have measured the characteristics of molecular beam epitaxy grown GaInNAsSb solar cells with different bandgaps using AM1.5G real sun illumination. Based on the solar cell diode characteristics and known pa...

    Arto Aho, Antti Tukiainen, Ville Polojärvi and Mircea Guina

    Nanoscale Research Letters 2014 9:61

    Published on: 5 February 2014

  7. Nano Express

    Carrier trapping and escape times in p-i-n GaInNAs MQW structures

    We used a semi-classical model to describe carrier capture into and thermionic escape from GaInNAs/GaAs multiple quantum wells (MQWs) situated within the intrinsic region of a GaAs p-i-n junction. The results ...

    Hagir M Khalil and Naci Balkan

    Nanoscale Research Letters 2014 9:21

    Published on: 13 January 2014

  8. Nano Express

    Structural and optical characterizations of InPBi thin films grown by molecular beam epitaxy

    InPBi thin films have been grown on InP by gas source molecular beam epitaxy. A maximum Bi composition of 2.4% is determined by Rutherford backscattering spectrometry. X-ray diffraction measurements show good ...

    Yi Gu, Kai Wang, Haifei Zhou, Yaoyao Li, Chunfang Cao, Liyao Zhang, Yonggang Zhang, Qian Gong and Shumin Wang

    Nanoscale Research Letters 2014 9:24

    Published on: 13 January 2014

  9. Nano Express

    Optical gain in 1.3-μm electrically driven dilute nitride VCSOAs

    We report the observation of room-temperature optical gain at 1.3 μm in electrically driven dilute nitride vertical cavity semiconductor optical amplifiers. The gain is calculated with respect to injected powe...

    Sefer Bora Lisesivdin, Nadir Ali Khan, Simone Mazzucato, Naci Balkan, Michael John Adams, Ville-Markus Korpijärvi, Mircea Guina, Gabor Mezosi and Marc Sorel

    Nanoscale Research Letters 2014 9:22

    Published on: 13 January 2014

  10. Nano Express

    Bismuth incorporation and the role of ordering in GaAsBi/GaAs structures

    The structure and composition of single GaAsBi/GaAs epilayers grown by molecular beam epitaxy were investigated by optical and transmission electron microscopy techniques. Firstly, the GaAsBi layers exhibit tw...

    Daniel F Reyes, Faebian Bastiman, Chris J Hunter, David L Sales, Ana M Sanchez, John PR David and David González

    Nanoscale Research Letters 2014 9:23

    Published on: 13 January 2014

  11. Nano Review

    Low-temperature photoluminescence study of exciton recombination in bulk GaAsBi

    The exciton recombination processes in a series of elastically strained GaAsBi epilayers are investigated by means of time-integrated and time-resolved photoluminescence at T = 10 K. The bismuth content in the sa...

    Simone Mazzucato, Henri Lehec, Helene Carrère, Hajer Makhloufi, Alexandre Arnoult, Chantal Fontaine, Thierry Amand and Xavier Marie

    Nanoscale Research Letters 2014 9:19

    Published on: 13 January 2014