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Novel gain materials and devices based on III-V-N/Bi compounds

  1. Content type: Nano Review

    We report the observation of thermal annealing- and nitrogen-induced effects on electronic transport properties of as-grown and annealed n- and p-type modulation-doped Ga1 - xIn x ...

    Authors: Ömer Dönmez, Fahrettin Sarcan, Ayse Erol, Mustafa Gunes, Mehmet Çetin Arikan, Janne Puustinen and Mircea Guina

    Citation: Nanoscale Research Letters 2014 9:141

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  2. Content type: Nano Express

    We have grown GaAsBi quantum wells by molecular beam epitaxy. We have studied the properties of a 7% Bi GaAsBi quantum well and their variation with thermal annealing. High-resolution X-ray diffraction, second...

    Authors: Hajer Makhloufi, Poonyasiri Boonpeng, Simone Mazzucato, Julien Nicolai, Alexandre Arnoult, Teresa Hungria, Guy Lacoste, Christophe Gatel, Anne Ponchet, Hélène Carrère, Xavier Marie and Chantal Fontaine

    Citation: Nanoscale Research Letters 2014 9:123

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  3. Content type: Nano Express

    Bulk GaAs1 - xBi x /GaAs alloys with various bismuth compositions are studied using power- and temperature-dependent photoluminescence (PL), Raman scattering, and atomic force mi...

    Authors: Fahrettin Sarcan, Ömer Dönmez, Kamuran Kara, Ayse Erol, Elif Akalın, Mehmet Çetin Arıkan, Hajer Makhloufi, Alexandre Arnoult and Chantal Fontaine

    Citation: Nanoscale Research Letters 2014 9:119

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  4. Content type: Nano Express

    Photocurrent oscillations, observed at low temperatures in lattice-matched Ga1−xIn x N y As1−y/GaAs multiple quantum well (MQW) p-i-n samples, a...

    Authors: Ben Royall, Hagir Khalil, Simone Mazzucato, Ayse Erol and Naci Balkan

    Citation: Nanoscale Research Letters 2014 9:84

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  5. Content type: Nano Express

    Time-resolved photoluminescence (PL) was applied to study the dynamics of carrier recombination in GaInNAsSb quantum wells (QWs) emitting near 1.3 μm and annealed at various temperatures. It was observed that ...

    Authors: Michal Baranowski, Robert Kudrawiec, Marcin Syperek, Jan Misiewicz, Tomas Sarmiento and James S Harris

    Citation: Nanoscale Research Letters 2014 9:81

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  6. Content type: Nano Express

    We report a time-resolved photoluminescence study for GaInNAs and GaNAsSb p-i-n bulk solar cells grown on GaAs(100). In particular, we studied the extent to which the carrier lifetime decreases with the increa...

    Authors: Alexander Gubanov, Ville Polojärvi, Arto Aho, Antti Tukiainen, Nikolai V Tkachenko and Mircea Guina

    Citation: Nanoscale Research Letters 2014 9:80

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  7. Content type: Nano Express

    An extensive study on molecular beam epitaxy growth conditions of quaternary GaAsSbN as a capping layer (CL) for InAs/GaAs quantum dots (QD) was carried out. In particular, CL thickness, growth temperature, an...

    Authors: Antonio D Utrilla, Jose M Ulloa, Alvaro Guzman and Adrian Hierro

    Citation: Nanoscale Research Letters 2014 9:36

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  8. Content type: Nano Express

    The Top-Hat hot electron light emission and lasing in semiconductor heterostructure (HELLISH)-vertical-cavity semiconductor optical amplifier (THH-VCSOA) is a bidirectional light-emitting and light-absorbing h...

    Authors: Faten Adel Ismael Chaqmaqchee and Naci Balkan

    Citation: Nanoscale Research Letters 2014 9:37

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  9. Content type: Nano Express

    InPBi thin films have been grown on InP by gas source molecular beam epitaxy. A maximum Bi composition of 2.4% is determined by Rutherford backscattering spectrometry. X-ray diffraction measurements show good ...

    Authors: Yi Gu, Kai Wang, Haifei Zhou, Yaoyao Li, Chunfang Cao, Liyao Zhang, Yonggang Zhang, Qian Gong and Shumin Wang

    Citation: Nanoscale Research Letters 2014 9:24

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  10. Content type: Nano Express

    We report the observation of room-temperature optical gain at 1.3 μm in electrically driven dilute nitride vertical cavity semiconductor optical amplifiers. The gain is calculated with respect to injected powe...

    Authors: Sefer Bora Lisesivdin, Nadir Ali Khan, Simone Mazzucato, Naci Balkan, Michael John Adams, Ville-Markus Korpijärvi, Mircea Guina, Gabor Mezosi and Marc Sorel

    Citation: Nanoscale Research Letters 2014 9:22

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  11. Content type: Nano Express

    The structure and composition of single GaAsBi/GaAs epilayers grown by molecular beam epitaxy were investigated by optical and transmission electron microscopy techniques. Firstly, the GaAsBi layers exhibit tw...

    Authors: Daniel F Reyes, Faebian Bastiman, Chris J Hunter, David L Sales, Ana M Sanchez, John PR David and David González

    Citation: Nanoscale Research Letters 2014 9:23

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  12. Content type: Nano Review

    The exciton recombination processes in a series of elastically strained GaAsBi epilayers are investigated by means of time-integrated and time-resolved photoluminescence at T = 10 K. The bismuth content in the sa...

    Authors: Simone Mazzucato, Henri Lehec, Helene Carrère, Hajer Makhloufi, Alexandre Arnoult, Chantal Fontaine, Thierry Amand and Xavier Marie

    Citation: Nanoscale Research Letters 2014 9:19

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