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Applications of Atomic Layer Deposition

Edited by Gaoshan Huang (Fudan University, China), Wen-Jun Liu (Fudan University, China) and Xinwei Wang (Peking University Shenzhen Graduate School, China)

The atomic layer deposition (ALD) technique has been widely used and explored in numerous fields such as microelectronics, photoelectronics, optical coating, functional nanomaterials, MEMS/NEMS, energy storage, biotechnology, catalysis technology and etc. This is attributed to some unique advantages of ALD, including precise control of nano-scale thickness, superior uniformity across a large area, excellent conformity, relatively low deposition temperature and stoichiometric composition. This thematic series in Nanoscale Research Letters is focused on recent progresses in ALD-related researches. The scope includes both theoretical and experimental investigations related to basic principle and practical application of ALD. The future direction is also discussed. 

New articles in the collection will be added here as they are published.

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  1. Content type: Nano Express

    In this work, we report the successful growth of high-quality SiO2 films by low-temperature plasma-enhanced atomic layer deposition using an oxidant which is compatible with moisture/oxygen sensitive materials. T...

    Authors: Zhen Zhu, Perttu Sippola, Oili M. E. Ylivaara, Chiara Modanese, Marisa Di Sabatino, Kenichiro Mizohata, Saoussen Merdes, Harri Lipsanen and Hele Savin

    Citation: Nanoscale Research Letters 2019 14:55

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  2. Content type: Nano Express

    For metal-insulator-metal (MIM) capacitors applicated in the fields of RF, DRAM, and analog/mixed-signal integrated circuits, a high capacitance density is imperative with the downscaling of the device feature...

    Authors: Bao Zhu, Xiaohan Wu, Wen-Jun Liu, Shi-Jin Ding, David Wei Zhang and Zhongyong Fan

    Citation: Nanoscale Research Letters 2019 14:53

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  3. Content type: Nano Express

    With Moore’s law closing to its physical limit, traditional von Neumann architecture is facing a challenge. It is expected that the computing in-memory architecture-based resistive random access memory (RRAM) ...

    Authors: Zhen-Yu He, Tian-Yu Wang, Lin Chen, Hao Zhu, Qing-Qing Sun, Shi-Jin Ding and David Wei Zhang

    Citation: Nanoscale Research Letters 2019 14:51

    Published on: