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Coding and Signal Processing for Non-Volatile Memories

  1. Non-volatile resistive memories, such as phase-change RAM (PRAM) and spin transfer torque RAM (STT-RAM), have emerged as promising candidates because of their fast read access, high storage density, and very l...

    Authors: Chengen Yang, Yunus Emre, Yu Cao and Chaitali Chakrabarti
    Citation: EURASIP Journal on Advances in Signal Processing 2012 2012:211
    Content type: Research Published on:

  2. Recently, low-density parity-check (LDPC) codes have been applied in flash memories to correct errors. However, as verified in this article, their performance degrades rapidly as the number of stuck cells incr...

    Authors: Qin Huang, Song Pan, Mu Zhang and Zulin Wang
    Citation: EURASIP Journal on Advances in Signal Processing 2012 2012:208
    Content type: Research Published on:

  3. Semiconductor technology scaling makes NAND flash memory subject to continuous raw storage reliability degradation, leading to the demand for more and more powerful error correction codes. This inevitable tren...

    Authors: Wenzhe Zhao, Guiqiang Dong, Hongbin Sun, Nanning Zheng and Tong Zhang
    Citation: EURASIP Journal on Advances in Signal Processing 2012 2012:203
    Content type: Research Published on:

  4. In 1M-bit/cell multi-level cell (MLC) flash memories, it is more difficult to guarantee the reliability of data as M increases. The reason is that an M-bit/cell MLC has 2 M stat...

    Authors: Yongjune Kim, Jaehong Kim, Jun Jin Kong, B V K Vijaya Kumar and Xin Li
    Citation: EURASIP Journal on Advances in Signal Processing 2012 2012:196
    Content type: Research Published on: