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International Conference on Superlattices, Nanostructures and Nanodevices (ICSNN 2010)

Shushen Li, Jian Liu and PingHeng Tan

  1. Content type: Nano Express

    We investigate the effect of an external magnetic field on the carrier states that are localized at a potential kink and a kink-antikink in bilayer graphene. These chiral states are localized at the interface ...

    Authors: Mohammad Zarenia, Joao Milton Pereira Jr, François Maria Peeters and Gil de Aquino Farias

    Citation: Nanoscale Research Letters 2011 6:452

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  2. Content type: Nano Express

    We have investigated the structure of non-polar GaN, both on the M - and A-plane, grown on LiGaO2 by plasma-assisted molecular beam epitaxy. The epitaxial relationship and the microstructure of the GaN films are ...

    Authors: Cheng-Hung Shih, Teng-Hsing Huang, Ralf Schuber, Yen-Liang Chen, Liuwen Chang, Ikai Lo, Mitch MC Chou and Daniel M Schaadt

    Citation: Nanoscale Research Letters 2011 6:425

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  3. Content type: Nano Express

    We present transport measurements on a strongly coupled graphene quantum dot in a perpendicular magnetic field. The device consists of an etched single-layer graphene flake with two narrow constrictions separa...

    Authors: Johannes Güttinger, Christoph Stampfer, Tobias Frey, Thomas Ihn and Klaus Ensslin

    Citation: Nanoscale Research Letters 2011 6:253

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  4. Content type: Nano Express

    We develop a simple and low-cost technique based on chemical vapor deposition from which large-size graphene films with 5-10 graphene layers can be produced reliably and the graphene films can be transferred e...

    Authors: Wen Xu, Youpin Gong, Liwei Liu, Hua Qin and Yanli Shi

    Citation: Nanoscale Research Letters 2011 6:250

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  5. Content type: Nano Express

    Transients of Mn internal 3d 5 luminescence in ZnS/Mn nanowires are strongly non-exponential. This non-exponential decay arises from an excitation transfer from the Mn ions to so-called killer centers, i.e., non-...

    Authors: Uwe Kaiser, Limei Chen, Sebastian Geburt, Carsten Ronning and Wolfram Heimbrodt

    Citation: Nanoscale Research Letters 2011 6:228

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  6. Content type: Nano Express

    We study driven by an external electric field quantum orbital and spin dynamics of electron in a one-dimensional double quantum dot with spin-orbit coupling. Two types of external perturbation are considered: ...

    Authors: Denis Khomitsky and Eugene Sherman

    Citation: Nanoscale Research Letters 2011 6:212

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  7. Content type: Nano Express

    In this study, we investigated pre-structured (100) GaAs sample surfaces with respect to subsequent site-selective quantum dot growth. Defects occurring in the GaAs buffer layer grown after pre-structuring are...

    Authors: Mathieu Helfrich, Roland Gröger, Alexander Förste, Dimitri Litvinov, Dagmar Gerthsen, Thomas Schimmel and Daniel M Schaadt

    Citation: Nanoscale Research Letters 2011 6:211

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  8. Content type: Nano Express

    The strong anisotropic forbidden transition has been observed in a series of InGaAs/GaAs single-quantum well with well width ranging between 3 nm and 7 nm at 80 K. Numerical calculations within the envelope fu...

    Authors: Jin-Ling Yu, Yong-Hai Chen, Chen-Guang Tang, ChongYun Jiang and Xiao-Ling Ye

    Citation: Nanoscale Research Letters 2011 6:210

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  9. Content type: Nano Express

    An easy approach to fabricate ordered pattern using nanosphere lithography and reactive iron etching technology was demonstrated. Long-range ordered GeSi nanorings with 430 nm period were grown on patterned Si...

    Authors: Yingjie Ma, Jian Cui, Yongliang Fan, Zhenyang Zhong and Zuimin Jiang

    Citation: Nanoscale Research Letters 2011 6:205

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  10. Content type: Nano Express

    We perform an electroreflectance spectroscopy of Ge/Si self-assembled quantum dots in the near-infrared and in the mid-infrared spectral range. Up to three optical transitions are observed. The low-energy reso...

    Authors: Andrew Yakimov, Aleksandr Nikiforov, Aleksei Bloshkin and Anatolii Dvurechenskii

    Citation: Nanoscale Research Letters 2011 6:208

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  11. Content type: Nano Express

    Photocurrent measurements have been performed on a quantum cascade detector structure under strong magnetic field applied parallel to the growth axis. The photocurrent shows oscillations as a function of B. In or...

    Authors: François-Régis Jasnot, Nicolas Péré-Laperne, Louis-Anne de Vaulchier, Yves Guldner, Francesca Carosella, Robson Ferreira, Amandine Buffaz, Laetitia Doyennette, Vincent Berger, Mathieu Carras and Xavier Marcadet

    Citation: Nanoscale Research Letters 2011 6:206

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  12. Content type: Nano Express

    We theoretically examine the effect of a single phonon mode on the structure of the frequency dependence of the ac conductance of molecular junctions, in the linear response regime. The conductance is enhanced...

    Authors: Akiko Ueda, Ora Entin-Wohlman and Amnon Aharony

    Citation: Nanoscale Research Letters 2011 6:204

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  13. Content type: Nano Express

    Nonlinear charge transport parallel to the layers of p-modulation-doped GaInNAs/GaAs quantum wells (QWs) is studied both theoretically and experimentally. Experimental results show that at low temperature, T = 13...

    Authors: Hagir Mohammed Khalil, Yun Sun, Naci Balkan, Andreas Amann and Markku Sopanen

    Citation: Nanoscale Research Letters 2011 6:191

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  14. Content type: Nano Express

    Au-Si nano-particle-decorated silicon nanowire arrays have been fabricated by Au film deposition on silicon nanowire array substrates and then post-thermal annealing under hydrogen atmosphere. Field emission m...

    Authors: Fei Zhao, Guo-an Cheng, Rui-ting Zheng, Dan-dan Zhao, Shao-long Wu and Jian-hua Deng

    Citation: Nanoscale Research Letters 2011 6:176

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  15. Content type: Nano Express

    The electrical conductivity σ has been calculated for p-doped GaAs/Al0.3Ga0.7As and cubic GaN/Al0.3Ga0.7N thin superlattices (SLs). The calculations are done within a self-consistent approach to the

    Authors: Osmar FP dos Santos, Sara CP Rodrigues, Guilherme M Sipahi, Luísa MR Scolfaro and Eronides F da Silva Jr

    Citation: Nanoscale Research Letters 2011 6:175

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  16. Content type: Nano Express

    Transient spin grating experiments are used to investigate the electron spin diffusion in intrinsic (110) GaAs/AlGaAs multiple quantum well at room temperature. The measured spin diffusion length of optically ...

    Authors: Changcheng Hu, Huiqi Ye, Gang Wang, Haitao Tian, Wenxin Wang, Wenquan Wang, Baoli Liu and Xavier Marie

    Citation: Nanoscale Research Letters 2011 6:149

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  17. Content type: Nano Review

    In this article, using first-principles electronic structure calculations within the spin density functional theory, alternated magnetic and non-magnetic layers of rutile-CrO2 and rutile-SnO2 respectively, in a (...

    Authors: Pablo D Borges, Luísa MR Scolfaro, Horácio W Leite Alves, Eronides F da Silva Jr and Lucy VC Assali

    Citation: Nanoscale Research Letters 2011 6:146

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  18. Content type: Nano Express

    A delta-doped quantum well with additional modulation doping may have potential applications. Utilizing such a hybrid system, it is possible to experimentally realize an extremely high two-dimensional electron...

    Authors: Dong-Sheng Luo, Li-Hung Lin, Yi-Chun Su, Yi-Ting Wang, Zai Fong Peng, Shun-Tsung Lo, Kuang Yao Chen, Yuan-Huei Chang, Jau-Yang Wu, Yiping Lin, Sheng-Di Lin, Jeng-Chung Chen, Chun-Feng Huang and Chi-Te Liang

    Citation: Nanoscale Research Letters 2011 6:139

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  19. Content type: Nano Express

    A direct insulator-quantum Hall (I-QH) transition corresponds to a crossover/transition from the insulating regime to a high Landau level filling factor ν > 2 QH state. Such a transition has been attracting a ...

    Authors: Chi-Te Liang, Li-Hung Lin, Chen Kuang Yoa, Shun-Tsung Lo, Yi-Ting Wang, Dong-Sheng Lou, Gil-Ho Kim, Chang Yuan-Huei, Yuichi Ochiai, Nobuyuki Aoki, Jeng-Chung Chen, Yiping Lin, Huang Chun-Feng, Sheng-Di Lin and David A Ritchie

    Citation: Nanoscale Research Letters 2011 6:131

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  20. Content type: Nano Express

    Superlattices were introduced 40 years ago as man-made solids to enrich the class of materials for electronic and optoelectronic applications. The field metamorphosed to quantum wells and quantum dots, with ev...

    Authors: Raphael Tsu

    Citation: Nanoscale Research Letters 2011 6:127

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  21. Content type: Nano Express

    In this article, the authors reported a theoretical study of structural and electronic properties of PbTe inclusions in CdTe matrix as well as CdTe nano-clusters in PbTe matrix. The structural properties are s...

    Authors: Małgorzata Bukała, Piotr Sankowski, Ryszard Buczko and Perła Kacman

    Citation: Nanoscale Research Letters 2011 6:126

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  22. Content type: Nano Express

    MnAs films are grown on GaAs surfaces by molecular beam epitaxy. Specular and grazing incidence X-ray diffractions are used to study the influence of different strain states of MnAs/GaAs (110) and MnAs/GaAs (0...

    Authors: Pengfa Xu, Jun Lu, Lin Chen, Shuai Yan, Haijuan Meng, Guoqiang Pan and Jianhua Zhao

    Citation: Nanoscale Research Letters 2011 6:125

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  23. Content type: Nano Express

    We have studied the polarized resolved photoluminescence in an n-type resonant tunneling diode (RTD) of GaAs/AlGaAs which incorporates a layer of InAs self-assembled quantum dots (QDs) in the center of a GaAs ...

    Authors: Ednilson C dos Santos, Yara Galvão Gobato, Maria JSP Brasil, David A Taylor and Mohamed Henini

    Citation: Nanoscale Research Letters 2011 6:115

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  24. Content type: Nano Express

    Hot electron light emission and lasing in semiconductor heterostructure (Hellish) devices are surface emitters the operation of which is based on the longitudinal injection of electrons and holes in the active...

    Authors: Faten Adel Ismail Chaqmaqchee, Simone Mazzucato, Murat Oduncuoglu, Naci Balkan, Yun Sun, Mustafa Gunes, Maxime Hugues and Mark Hopkinson

    Citation: Nanoscale Research Letters 2011 6:104

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  25. Content type: Nano Express

    Magnetotransport measurements are performed on an aluminum thin film grown on a GaAs substrate. A crossover from electron- to hole-dominant transport can be inferred from both longitudinal resistivity and Hall...

    Authors: Shun-Tsung Lo, Chiashain Chuang, Sheng-Di Lin, Kuang Yao Chen, Chi-Te Liang, Shih-Wei Lin, Jau-Yang Wu and Mao-Rong Yeh

    Citation: Nanoscale Research Letters 2011 6:102

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  26. Content type: Nano Express

    We have investigated the polarization-resolved photoluminescence (PL) in an asymmetric n-type GaAs/AlAs/GaAlAs resonant tunneling diode under magnetic field parallel to the tunnel current. The quantum well (QW) P...

    Authors: Lara F dos Santos, Yara Galvão Gobato, Márcio D Teodoro, Victor Lopez-Richard, Gilmar E Marques, Maria JSP Brasil, Milan Orlita, Jan Kunc, Duncan K Maude, Mohamed Henini and Robert J Airey

    Citation: Nanoscale Research Letters 2011 6:101

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  27. Content type: Nano Express

    We report the fabrication of gold/polycarbonate (Au/PC) hybrid nano resonators on plastic substrates through a nano-transfer printing (nTP) technique, and the parametric studies of the resonant frequency of th...

    Authors: Edward Dechaumphai, Zhao Zhang, Nathan P Siwak, Reza Ghodssi and Teng Li

    Citation: Nanoscale Research Letters 2011 6:90

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  28. Content type: Nano Express

    Temperature and carrier density-dependent spin dynamics for GaAs/AlGaAs quantum wells (QWs) with different structural symmetries have been studied by using time-resolved Kerr rotation technique. The spin relax...

    Authors: Lifen Han, Yonggang Zhu, Xinhui Zhang, Pingheng Tan, Haiqiao Ni and Zhichuan Niu

    Citation: Nanoscale Research Letters 2011 6:84

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  29. Content type: Nano Express

    The surface morphology of Ge0.96Sn0.04/Si(100) heterostructures grown at temperatures from 250 to 450°C by atomic force microscopy (AFM) and scanning tunnel microscopy (STM) ex situ has been studied. The statisti...

    Authors: Vladimir Mashanov, Vladimir Ulyanov, Vyacheslav Timofeev, Aleksandr Nikiforov, Oleg Pchelyakov, Ing-Song Yu and Henry Cheng

    Citation: Nanoscale Research Letters 2011 6:85

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  30. Content type: Nano Express

    A new measure to enhance the performance of InAs quantum dot solar cell is proposed and measured. One monolayer AlAs is deposited on top of InAs quantum dots (QDs) in multistack solar cells. The devices were f...

    Authors: Dongzhi Hu, Claiborne CO McPheeters, Edward T Yu and Daniel M Schaadt

    Citation: Nanoscale Research Letters 2011 6:83

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