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Remote and Van der Waals Epitaxy

Guest Editors:
Young Jun Chang: University of Seoul, South Korea
Young Joon Hong: Sejong University, South Korea

Submission Status: Open   |   Submission Deadline: 28 February 2023

Remote and van der Waals (vdW) epitaxy differs from con-ventional epitaxy that relies on forming strong chemical bonds on a bare wafer. Instead, the remote and vdW epitaxy is driven by a remote attracting force from the underlying wafer through a two-dimensional (2D) layer or by vdW force direct-ly from the (2D) layer. This enables the efficient release of interfacial strain and the creation of high-quality epitaxial layers with fewer dislocations. The loosely bound interface also allows easy peeling off the epitaxial layer, facilitating vertical hetero-integration in the fabrication of high-density, multi-functional devices. This thematic issue covers the working principle, strategies for overcoming challenges in remote and vdW epitaxy, and the achievements and future outlook for its practical device applications.

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This Collection welcomes submission of Research Articles. Before submitting your manuscript, please ensure you have read our submission guidelines. Articles for this Collection should be submitted via our submission system. During the submission process, under the section additional information, you will be asked whether you are submitting to a Collection, please select "Remote and Van der Waals Epitaxy" from the dropdown menu.

Articles will undergo the journal’s standard peer-review process and are subject to all of the journal’s standard policies. Articles will be added to the Collection as they are published.

The Guest Editors have no competing interests with the submissions which they handle through the peer review process. The peer review of any submissions for which the Guest Editors have competing interests is handled by another Editorial Board Member who has no competing interests.