Young Jun Chang: University of Seoul, South Korea
Young Joon Hong: Sejong University, South Korea
Submission Status: Open | Submission Deadline: Closed
Remote and van der Waals (vdW) epitaxy differs from con-ventional epitaxy that relies on forming strong chemical bonds on a bare wafer. Instead, the remote and vdW epitaxy is driven by a remote attracting force from the underlying wafer through a two-dimensional (2D) layer or by vdW force direct-ly from the (2D) layer. This enables the efficient release of interfacial strain and the creation of high-quality epitaxial layers with fewer dislocations. The loosely bound interface also allows easy peeling off the epitaxial layer, facilitating vertical hetero-integration in the fabrication of high-density, multi-functional devices. This thematic issue covers the working principle, strategies for overcoming challenges in remote and vdW epitaxy, and the achievements and future outlook for its practical device applications.